Various types of GaN/InGaN nanostructures grown by MOCVD on Si(111) substrate

Abstract

In this paper we obtained GaN and InGaN nanowires on AlN/Si (111) templates via pulsed Metal Organic Chemical Vapour Deposition (MOCVD). The growth modes were investigated, in which selective growth is possible. The impact of NH3 flow and TMG flow and exposure time were investigated. Also the possibility of using indium catalyst was studied. It was shown that In can be used in Au‐In melt and as self‐suffisient catalyst. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)