Vertical alignment of multilayered quantum dots studied by x-ray grazing-incidence diffraction

Kegel, I.; Metzger, T. H.; Peisl, J.; Stangl, J.; Bauer, G.; Smilgies, Detlef‐M.

doi:10.1103/physrevb.60.2516

Cited by 45 publications

(37 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The shape ͑semitriangular on a logarithmic scale͒ is currently being analyzed in a manner similar to the work of Kegel et al 44,45 but without their consideration of concentration. Figures 7͑a͒ and 7͑b͒ are included for a clearer understanding of the reflectivity fitting process.…”

Section: Resultsmentioning

confidence: 99%

Synchrotron x-ray studies of vitreousSiO2over Si(001). I. Anisotropic glass contribution

et al. 2005

View full text Add to dashboard Cite

While numerous investigations of the structure and interface of amorphous SiO 2 thermally grown on Si, theoretical as well as experimental, have been carried out over the years, a definitive picture of this thin gate oxide and its interface remains lacking. We have explored this issue using synchrotron x rays in grazing incidence geometry. In this geometry a fourfold modulation in the first sharp diffraction peak ͑FSDP͒ from thin vitreous SiO 2 of 100 and 500 Å thickness can be observed. While the FSDP exhibits a modulation throughout the entire film, this modulation decays away from the interface. Reflectivity measurements were also performed, which reveal an interfacial layer of 3% density increase in the SiO 2 film over the bulk ͑film͒ density.

show abstract

Section: Resultsmentioning

confidence: 99%

Synchrotron x-ray studies of vitreousSiO2over Si(001). I. Anisotropic glass contribution

et al. 2005

View full text Add to dashboard Cite

show abstract

“…This leads to a narrow island size distribution. [3][4][5] The vertical correlation in island positions is explained by the effect of strain on the surface caused by the underlying buried islands. This strain changes the activation energies of the diffusion of adatoms deposited on the strained surface, and thereby affects the nucleation of islands in the topmost layer.…”

Section: Introductionmentioning

confidence: 99%

Kinetic Monte Carlo simulation of nucleation on patterned substrates

2000

View full text Add to dashboard Cite

The effects of a patterned substrate on island nucleation are investigated using kinetic Monte Carlo simulations. Two different models are formulated by incorporating an inhomogeneous energy surface into the basic solid-on-solid model of epitaxial growth to describe surface diffusion and consequent island nucleation on a patterned substrate. These models are related to two examples of real systems in which preferential nucleation at specific sites is encountered. Growth on a patterned substrate produces quite uniformly sized islands, which are are found to order into regular arrays displaying the periodicity of the underlying substrate. Confinement due to the patterned substrate is observed to be strongly dependent on the growth conditions. We demonstrate that there exists an optimal set of growth conditions determined by the length scale of the substrate pattern. In addition, the influence of the patterned substrate on the process of Ostwald ripening is discussed.

show abstract

“…There are several ways of locating quantum dots [4][5][6][7] , and the base for most of them is changing the chemical potential at certain locations, so that the adatoms trend to stay there. The method of growing quantum dots on patterned substrate has drawn increasing attention recently because of its low impurity and easy controlling [8] .…”

Section: Introductionmentioning

confidence: 99%

Influence of flux on the growth of InAs quantum dots on GaAs patterned substrate

Song

Liu

2007

Optoelectronic Materials and Devices II

View full text Add to dashboard Cite

Kinetic Monte Carlo simulations are applied on the investigation of the epitaxial growth of self-assembled InAs quantum dots on GaAs substrate with periodic strain-relief patterns. The study is focused on the initial stage when the first sub-monolayer is forming on top of the wetting layer. The flux is one of the most important growth parameters, which are studied in detail. It is demonstrated that uniformly sized and regularly ordered island arrays can be obtained by controlling flux, by means of analyzing the surface morphology, average island size, island size distribution and the standard deviation of island size distribution. If interruption is introduced, the influence of flux will significant different.The uniformity and order of islands will greatly affect the locating of quantum dots in sequent 3-D growth.

show abstract

Vertical alignment of multilayered quantum dots studied by x-ray grazing-incidence diffraction

Cited by 45 publications

References 25 publications

Synchrotron x-ray studies of vitreousSiO2over Si(001). I. Anisotropic glass contribution

Synchrotron x-ray studies of vitreousSiO2over Si(001). I. Anisotropic glass contribution

Kinetic Monte Carlo simulation of nucleation on patterned substrates

Influence of flux on the growth of InAs quantum dots on GaAs patterned substrate

Contact Info

Product

Resources

About