Vertical-cavity surface-emitting laser active regions for enhanced performance with optical pumping

Abstract

Abstract-We have developed an improved active region design for optically pumped vertical-cavity surface-emitting lasers. The design makes use of carrier-blocking layers to segment the absorber and promote uniform carrier populations in the quantum wells with pump efficiencies near 75%. A model to calculate the carrier distribution in the active region and a design methodology are presented along with a metric to describe the carrier uniformity in the quantum wells. Experimental verification of the performance improvements shows an over 50% reduction in device thresholds and an increase of 20 C in maximum operating temperatures.

Recent advances in ultrafast semiconductor disk lasers

“…Additionally, the QWs can be placed inhomogeneously within the pump-absorbing layer to distribute the excited carriers more equally over the QWs. This result can even be further enforced by introducing carrier barriers in the active region 156 .…”

Impact of strain on periodic gain structures in vertical external cavity surface-emitting lasers

“…The model assumes that the laser active region consists of alternate QW and barrier layers and QWs are reduced to points and act as carrier absorbers. To calculate the carrier density distribution along this active region for the given r value, the following 1D diffusion equation with no carrier drift contribution is solved for each barrier [28,29]:…”

Design and Fabrication of GaInAsP/InP VCSEL with Two a-Si/a-SiNx Bragg Reflectors

“…Each QWs group is surrounded by Q 1.18 layers of controlled thickness in order to obtain an efficient optical absorption of the pump laser. This design of the active region allows to obtain an homogenous optical absorption of the pump power and then an homogenous carrier injection (Geske et al 2004). As it is represented by the step 1 in Fig.…”