1993
DOI: 10.1109/68.196022
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Vertical optical communication through stacked silicon wafers using hybrid monolithic thin film InGaAsP emitters and detectors

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Cited by 37 publications
(12 citation statements)
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“…Indirect bonding technologies that are easier to use include adhesive bonding or eutectic bonding, where intermediate layers of polymers [20][21][22][23][24][25][26][27][28]36], spin-on-glasses [37] and metals [17][18][19]38]. These methods may ease bonding of dies to wafers, reducing the amount of III-V material to be used on a Si wafer.…”
Section: Indirect Inp-to-si Wafer Bondingmentioning
confidence: 99%
“…Indirect bonding technologies that are easier to use include adhesive bonding or eutectic bonding, where intermediate layers of polymers [20][21][22][23][24][25][26][27][28]36], spin-on-glasses [37] and metals [17][18][19]38]. These methods may ease bonding of dies to wafers, reducing the amount of III-V material to be used on a Si wafer.…”
Section: Indirect Inp-to-si Wafer Bondingmentioning
confidence: 99%
“…Thin-film emitters and detectors operating at a wavelength of 1.3 m (to which silicon is transparent) will be bonded to silicon drivers and amplifiers, respectively, to create this optical link. An epitaxial liftoff process employing a transfer diaphragm has been developed to perform the integration [4], and a bidirectional through-wafer link has been presented previously using InP/InGaAsP P-i-N detectors and InGaAsP p-n emitters integrated with standard silicon circuitry [3,11]. In this paper, we present an analysis of the tradeoffs inherent in such an integration.…”
Section: Physical Link Designmentioning
confidence: 99%
“…The integration is simplified because only a single step is necessary to bond both the emitter and the detector to a circuit. This design, however, is not a limitation of the integration technology, as separately optimized detector and emitter structures integrated onto the same circuit have been demonstrated [3]. The tradeoff for ease of integration is in the performance of the detector.…”
Section: Detector Designmentioning
confidence: 99%
“…Existing optical interconnect techniques such as index-guided and freespace networks are difficult to incorporate in threedimensional interconnection networks. This paper describes a three-dimensional optoelectrical network using hybrid integrated optoelectronic devices [2] and through-wafer transmissions [1]. The network is designed to provide 3.2 Gbits/sec off-chip bandwidth using vertical optical channels to eight neighboring chips.…”
Section: Introductionmentioning
confidence: 99%