2011
DOI: 10.1021/nl104362e
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Vertical Transfer of Uniform Silicon Nanowire Arrays via Crack Formation

Abstract: Vertical transfer of silicon nanowire (SiNW) arrays with uniform length onto adhesive substrates was realized by the assistance of creating a horizontal crack throughout SiNWs. The crack is formed by adding a water soaking step between consecutive Ag-assisted electroless etching processes of Si. The crack formation is related to the delamination, redistribution, and reattachment of the Ag film during the water soaking and subsequent wet etching steps. Moreover, the crack facilitates embedding SiNWs inside poly… Show more

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Cited by 77 publications
(92 citation statements)
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References 39 publications
(96 reference statements)
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“…And vertical transfer of Si nanowire arrays with uniform length onto adhesive substrates was realized by the assistance of creating a horizontal crack formed by adding a water soaking step between consecutive Ag-assisted electroless etching processes of Si. 83 Furthermore, aligned GaAs NWs 84 and even polymer nanowire arrays 85 can also be obtained by vertical growth. Also, by thermal evaporation of a ZnO:C powder, the effect of the powder source temperature and substrate temperature during the process of ZnO NWs growth has been analyzed.…”
Section: Direct Growth Of Vertical Nanowire Arraysmentioning
confidence: 99%
“…And vertical transfer of Si nanowire arrays with uniform length onto adhesive substrates was realized by the assistance of creating a horizontal crack formed by adding a water soaking step between consecutive Ag-assisted electroless etching processes of Si. 83 Furthermore, aligned GaAs NWs 84 and even polymer nanowire arrays 85 can also be obtained by vertical growth. Also, by thermal evaporation of a ZnO:C powder, the effect of the powder source temperature and substrate temperature during the process of ZnO NWs growth has been analyzed.…”
Section: Direct Growth Of Vertical Nanowire Arraysmentioning
confidence: 99%
“…In another method, the occurrence of horizontal cracks in silicon nanowires was used advantageously in the transfer process, enabling them to be broken from the substrate more easily. 18 This method is limited, however, to silicon nanowires made by metalassisted etching. Shear forces have been used for transferring nano-and microwires.…”
mentioning
confidence: 99%
“…Inspired by the metal nanoparticles' etching of Si wafer [19,20], we assembled Ag nanoparticles into a necklace with dense "hot spots" spread in 3-dimension by sacrificing SiNWs templates. Meanwhile, due to the facile transfer and high adhesion between the SiNWs and flexible PDMS films, AgNLs could be located on the surface of PDMA on the fixed position.…”
Section: Resultsmentioning
confidence: 99%
“…As sacrificial templates, SiNWs determines the location and orientation of the final AgNLs (SI, S3). Since the fabrication of SiNWs is well developed and the controlled transfer of SiNWs is obtained by contact printing, the site-specific synthesis of AgNLs or their arrays could also be realized [19][20][21][22][23]. Fig.…”
Section: Resultsmentioning
confidence: 99%