Vertical β-Ga₂O₃ Schottky Barrier Diodes With Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination

Hu, Chang‐Qi; Wang, Hengyu; Sheng, Kuang

doi:10.1109/led.2022.3222878

Cited by 25 publications

(6 citation statements)

References 29 publications

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“…The inclination angle of the mesa has an important effect on the performance of the device. Chen et al [199] used SiO 2 and Ni as etching masks to fabricate negative-and positive-beveled mesa structures, respectively. After F plasma treatment and the deposition of bilayer field plate dielectrics, they constructed SBDs as shown in Figure 9a-d.…”

Section: Mesa Termination Structurementioning

confidence: 99%

“…This indicates that SABFP can more effectively alleviate the concentration of electric fields. [199]; (e) β-Ga2O3 BFP and SABFP SBDs [200]. [199]; (e) β-Ga 2 O 3 BFP and SABFP SBDs [200].…”

Section: Mesa Termination Structurementioning

confidence: 99%

“…Figure 9. Device schematic of (a) FP-NB SBD and (b) SEM cross-section image; (c) PB SBD and (d) SEM cross-section image[199]; (e) β-Ga 2 O 3 BFP and SABFP SBDs[200].…”

mentioning

confidence: 99%

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A Review of β-Ga2O3 Power Diodes

He,

Zhao,

Huang

et al. 2024

Materials

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As the most stable phase of gallium oxide, β-Ga2O3 can enable high-quality, large-size, low-cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7–4.9 eV, a critical electric field strength of 8 MV/cm, and a Baliga’s figure of merit (BFOM) of up to 3444, which is 10 and 4 times higher than that of SiC and GaN, respectively, showing great potential for application in power devices. However, the lack of effective p-type Ga2O3 limits the development of bipolar devices. Most research has focused on unipolar devices, with breakthroughs in recent years. This review mainly summarizes the research progress fora different structures of β-Ga2O3 power diodes and gives a brief introduction to their thermal management and circuit applications.

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Section: Mesa Termination Structurementioning

confidence: 99%

Section: Mesa Termination Structurementioning

confidence: 99%

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A Review of β-Ga2O3 Power Diodes

He,

Zhao,

Huang

et al. 2024

Materials

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“…Gallium oxide (Ga 2 O 3 ) has excellent properties of a large band gap of 4.2-4.9 eV [1][2][3], a high theoretical avalanche breakdown field of 8.0 MV cm −1 [4,5], high thermal stability, and low production cost [6][7][8], becoming the next generation of excellent ultra-wide-band-gap semiconductor material. Due to these advantages, Ga 2 O 3 power metal-oxide-semiconductor field-effect transistors (MOSFETs) have become a strong contender in future power devices in space applications.…”

Section: Introductionmentioning

confidence: 99%

Research of single-event burnout in vertical Ga₂O₃ FinFET by low carrier lifetime control

Bao,

Yu,

Zhao

et al. 2024

Semicond. Sci. Technol.

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This paper presents the 2-D simulations of single-event burnout (SEB) in vertical enhancement-mode gallium oxide (Ga2O3) fin-shaped channels field-effect transistor (FinFET) by low carrier lifetime control (LCLC) method. The correctness of the structure parameters and simulated physical models are verified by the basic electrical characteristics in experiments. The SEB simulations show that the most sensitive region to heavy ion is the narrow channel region. The SEB failure is due to the diffusion of a large number of electron-hole pairs induced by heavy ion into a strong electric field region, resulting in a large transient current density to cause the thermal failure. Afterwards, the influences of the narrow channel region width on basic characteristics and SEB performance are discussed. Then, the SEB hardening mechanism of LCLC is studied that the electric field peak in the top of the structure can be effectively reduced, and the transient current caused by second avalanche is restrained. In addition, the basic characteristics with LCLC are proved to be hardly influenced in Ga2O3 FinFET. Finally, the carrier lifetime value and local control region are studied that the SEB hardening performance can be significantly improved by a large enough control area with a low carrier lifetime.

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“…In response to the aforementioned challenges, numerous edge termination and reduced surface field (RESURF) structures have been developed for β -Ga 2 O 3 SBD. The main edge termination structures include field plate (FP), [8][9][10][11] resistive termination, [7,[12][13][14][15][16] guard ring, [17,18] high barrier anode edge, [19] mesa termination, [20][21][22] junction termination extension (JTE), [23][24][25][26] and floating field rings (FFRs). [27][28][29] As for the surface field control of the main Schottky junction, there are feasible solutions such as metal-oxide-semiconductor (MOS) type trench fin, [30][31][32] and heterojunction barrier Schottky diode.…”

Section: Introductionmentioning

confidence: 99%

β-Ga₂O₃ junction barrier Schottky diode with NiO p-well floating field rings

Hao

et al. 2023

Chinese Phys. B

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Recently, β-Ga2O3, an ultra-wide bandgap semiconductor, has shown great potential to be used for power devices blessed to its unique material properties. For instance, the measured average critical field of the vertical Schottky barrier diode (SBD) based on β-Ga2O3 has reached 5.45 MV/cm, and no device in any material had measured a greater before. However, the high electric field of the β-Ga2O3 SBD makes it challenging to manage the electric field distribution and leakage current. Here, we show that β-Ga2O3 junction barrier Schottky diode with NiO p-well floating field rings (FFRs). For the central anode, we filled a circular trench array with NiO to reduce the surface field under the Schottky contact between them to reduce the leakage current of the device. For the anode edge, experimental results have demonstrated that the produced NiO/β-Ga2O3 heterojunction FFRs enable the spreading of the depletion region, thereby mitigating the crowding effect of electric fields at the anode edge. Additionally, simulation results indicate that the p-NiO field plate structure designed at the edges of the rings and central anode can further reduce the electric field. This work verified the feasibility of the heterojunction FFRs in β-Ga2O3 devices based on the experimental findings and provided ideas for managing the electric field of β-Ga2O3 SBD.

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Vertical β-Ga₂O₃ Schottky Barrier Diodes With Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination

Cited by 25 publications

References 29 publications

A Review of β-Ga2O3 Power Diodes

A Review of β-Ga2O3 Power Diodes

Research of single-event burnout in vertical Ga₂O₃ FinFET by low carrier lifetime control

β-Ga₂O₃ junction barrier Schottky diode with NiO p-well floating field rings

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Vertical β-Ga₂O₃ Schottky Barrier Diodes With Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination

Cited by 25 publications

References 29 publications

A Review of β-Ga2O3 Power Diodes

A Review of β-Ga2O3 Power Diodes

Research of single-event burnout in vertical Ga2O3 FinFET by low carrier lifetime control

β-Ga2O3 junction barrier Schottky diode with NiO p-well floating field rings

Contact Info

Product

Resources

About

Research of single-event burnout in vertical Ga₂O₃ FinFET by low carrier lifetime control

β-Ga₂O₃ junction barrier Schottky diode with NiO p-well floating field rings