Field electron emission from carbon nanotubes (CNT) is
preceded
by the transport of electrons from the cathode metal to emission sites.
Specifically, a supporting layer indispensable for adhesion of CNT
paste emitters onto the cathode metal would impose a potential barrier,
depending on its work function and interfacial electron transport
behaviors. In this paper, we investigated the supporting layer of
silicon carbide and nickel nanoparticles reacted onto a Kovar alloy
(Fe–Ni–Co) cathode substrate, which has been adopted
for reliable CNT paste emitters. The X-ray diffraction, X-ray photoelectron
spectroscopy, ultraviolet photoelectron spectroscopy, and electrical
conductivity measurements showed that the reaction of silicon carbide
and nickel nanoparticles on the Kovar metal strongly depends upon
the post-vacuum-annealing conditions and can be classified into two
procedures of a diffusion-induced reaction (DIR) and a diffusion-limited
reaction (DLR). The prolonged annealing at 750 °C for 5 h before
the main annealing of the CNT paste emitters at 800 °C for 5
min led to the DIR that has enhanced the Ni silicide phase and a lower
potential barrier for the interfacial electron transport, resulting
in increased and weakly temperature-dependent field electron emission
from the CNT paste emitters. On the other hand, the DLR with only
the main anneal of the CNT paste emitters at 800 °C for 5 min
gave rise to a higher potential barrier for the electron transport
and so lower and strongly temperature-dependent field electron emission.
From the results of the interfacial electron transport for the DIR
and DLR mechanisms in the CNT paste emitters, we concluded that the
ambient temperature dependency of field electron emission from CNT
tips in the moderate range of up to 400 °C, still controversial,
is mainly attributed to the supporting layer of the CNT emitter rather
than its intrinsic electron emission.