Vertically Extended Drain Double Gate Si1−xGex Source Tunnel FET : Proposal &amp; Investigation For Optimized Device Performance

Raj, Anand; Singh, Sangeeta; Priyadarshani, Kumari Nibha; Arya, Rajeev; Naugarhiya, Alok

doi:10.1007/s12633-020-00603-1

Cited by 20 publications

(5 citation statements)

References 37 publications

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“…The T(E) is expressed in Eq. ( 1 ) and calculated through WKB approximation [ 31 ]. where as E g denotes the engery gap between CB and VB at tunneling junction, m* shows the effective mass, represents the tunneling length and expresses in Eq.…”

Section: Device Structure and Simuation Frameworkmentioning

confidence: 99%

Performance Assessment and Optimization of Vertical Nanowire TFET for Biosensor Application

Kumar

Raj

2022

Trans. Electr. Electron. Mater.

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This paper reports the performance assessment of vertical silicon nanowire TFET (V-siNWTFET) design for biosensor applications using dielectric-modulation and gate underlap technique. The sensitivity of the V-siNWTFET is recognizing by immobilizing the different biological molecules such as lipids, biotin, uricase, protein, Gox, streptavidin, uriease, zein etc. in the cavity region which is created under the gate electrode and source oxide. The performance analysis is observed by varying the relative permittivity of the different biomolecules and analyzes the parametric variation both for neutral and charged biomolecules. The sensitivity of the biosensor has been detecting in the terms of drain current (I D ), threshold voltage (V TH ), subthreshold slope (SS), transconductance (g m ), and I ON /I OFF ratio. The proposed device structure has capable to reduce the leakage currents and high sensitivity biosensor design in the nanoscale regimes. The obtained best optimum parameters of the proposed devices are I ON (1.37E−08 A/µm), I OFF (9.44E−19 A/µm), SS (29.97 mV/dec) and I ON /I OFF (4.29E + 10) ratio with gate work-function (ϕ gate = 4.8 eV) and uniformly doped (1 × 10 –19 cm −3 ) silicon nanowire at drain to source voltage (V DS = 1.0 V). The higher sensitivity of the proposed V-siNWTFET for Biosensor is observed for Zein biomolecules (K = 5).

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Section: Device Structure and Simuation Frameworkmentioning

confidence: 99%

Performance Assessment and Optimization of Vertical Nanowire TFET for Biosensor Application

Kumar

Raj

2022

Trans. Electr. Electron. Mater.

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“…While metal-oxide-semiconductor (MOS) field-effect transistor (FET)-based devices offer several advantages over traditional bulk biosensors, they are not without drawbacks. Issues such as short-channel effects (SCEs), leakage current, a limited subthreshold slope (>60 mV/dec), and extended reaction times due to the kT/q limit contribute to restricted maximum sensitivity [10][11]. To address these specific constraints associated with MOSFET devices, the adoption of dielectrically modulated (DM) biosensors based on tunnel field-effect transistors (TFET) emerges as a solution.…”

Section: Introductionmentioning

confidence: 99%

Design and Performance Assessment of a Label- free Biosensor utilizing a Novel TFET Configuration

Anil Kumar,

Srinivasa Rao

2024

JICS

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The present study presents an innovative idea: an original design for a label-free biosensor utilizing H-shape channel configuration within a dielectrically modulated (DM) double-gate TFET (DGTFET) framework, which includes the incorporation of a drain pocket (DP). This design concept is introduced In this study, an analytical model for the DM DPDG-TFET has been created for the first time was formulated and subsequently verified through comparison with industry-standard simulation software (Silvaco TCAD). In this paper we have examine both the biosensor's sensitivity and its effectiveness when employed as a tunnel field-effect transistor (TFET) device. A comprehensive analysis of the device's performance has been conducted. The innovative configuration of the suggested TFET results in heightened sensitivity. Incorporating a drain pocket (DP) at the junction between the drain and channel effectively eliminates ambipolarity, showcasing a successful approach. The H-shape DM DPDGTFET design demonstrates its superiority over various devices documented in the literature. The presence or lack of electric charge in various biomolecules is examined in order to evaluate the device's sensitivity as a label-free biosensor.

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“…As an innovative electronic device, the TFET devices leverages quantum mechanical tunneling phenomena to facilitate low-power operation, making it a promising device for applications demanding high energy efficiency and improved transistor scaling (6). In contrast to MOSFETs, TFETs exploit the quantum tunneling effect, allowing electrons to pass through a thin barrier without the need for high thermal energy (7). This unique an improved characteristic enables TFETs to operate at lower voltage levels, resulting in reduced power consumption and improved overall energy efficiency.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of Symmetrical Dual Gate Tunnel Field Effect Transistor with Gate Dielectric Materials in 10nm Technology

Buttol,

Balaji,

Srinivasa Rao

2024

IJE

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In this work, a Symmetrical Dual Gate Tunnel Field Effect Transistor (SDGTFET) is proposed with gate dielectric materials in 10nm technology. The electrical performance parameters of this proposed device are investigated using technology computer aided design (TCAD) simulator. The new SDGTFET employing with high-k dielectric material such as hafnium oxide (HfO2) and interfacial layer (IL). The 2nm HfO2 with 30 dielectric constant is used between the interfacial layer and the metal gate on both sides of the device. The variation of the drain current with the varying of gate length, effective gate materials and effective oxide layer thickness of the device is evaluated in this work. By optimizing the proposed device with gate dielectric material the on current gets ∼4.2 times enhanced and the averaged subthreshold swing (SSavg) becomes reduced from 90.2 mV/dec to 53.8 mV/dec. Therefore, the SDGTFET structure has better performance than single material and double material TFET and shows a lower ambipolar current and a better on current to off current ratio.

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Vertically Extended Drain Double Gate Si1−xGex Source Tunnel FET : Proposal & Investigation For Optimized Device Performance

Cited by 20 publications

References 37 publications

Performance Assessment and Optimization of Vertical Nanowire TFET for Biosensor Application

Performance Assessment and Optimization of Vertical Nanowire TFET for Biosensor Application

Design and Performance Assessment of a Label- free Biosensor utilizing a Novel TFET Configuration

Design and Analysis of Symmetrical Dual Gate Tunnel Field Effect Transistor with Gate Dielectric Materials in 10nm Technology

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