Very-high-speed metal-oxide-metal diodes on W-Ni, Pt-Ti, and Pt-W contacts

Denisov, V. I.; Zakharyash, V. F.; Klement'ev, V. M.; Chepurov, S. V.

doi:10.1134/s002044120704015x

Cited by 4 publications

(3 citation statements)

References 8 publications

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“…he metal-insulator-metal (MIM) diode is a quantum device consisting of a thin insulator deposited between two thin metal electrode films with different work functions, which cause an asymmetric electric current to flow through the insulator with respect to the polarity of the electrodes and can operate at frequencies well into the infrared range (Sakuma & Evenson, 1974;Evenson et al, 1970;Drullinger et al, 1983;Denisov et al, 2007;Evenson et al, 1984). As a result, the device is useful in a broad range of applications, including wireless power transfer such as in intraocular pressure (IOP) measurement soft-contact lens and radio-frequency identification (RFID) tags, thermal-energy harvesting, and high frequency detectors (Jinpeng et al, 2012;Pan et al, 2014;Periasamy et al, 2011).…”

Section: Introductionmentioning

confidence: 99%

High-Performance Atomic Layer Deposited Al2O3 Insulator Based Metal-Insulator-Metal Diode

Etor¹,

Dodd²,

Balocco³

2022

FUOYEJET

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The fabrication of metal–insulator– metal (MIM) diode using an ultrathin Al2O3 insulator layer, deposited using atomic layer deposition (ALD) is presented. The Al2O3 insulating layer was found to be highly uniform throughout the diode junction, effectively overcoming the main fabrication challenge in MIM diodes. The diodes exhibit strong non-linear current–voltage curves, have a typical zero-bias curvature coefficient of 5.4 V−1 and a zero-bias resistance of approximately 118 kΩ, a value considerably smaller than other MIM diode topologies and that allows more current to be rectified. Other results including current ratio and yield of the diode also competes favorably with the state-of-the-art MIM diodes such as the recently produced metal-octadecyltrichlorosilane (OTS)-metal structure.

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Section: Introductionmentioning

confidence: 99%

High-Performance Atomic Layer Deposited Al2O3 Insulator Based Metal-Insulator-Metal Diode

Etor¹,

Dodd²,

Balocco³

2022

FUOYEJET

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“…Maximising the work function difference [2] between these metals is also beneficial as it increases the asymmetry of the resulting diode. A number of metal combinations have been tried [1, 3]: here, we have chosen titanium, which oxidises readily, and maximised the work function difference by using inert platinum as the second metal.…”

Section: Introductionmentioning

confidence: 99%

Controlled reactive ion etching and plasma regrowth of titanium oxides of known thickness for production of metal-oxide-metal diodes

2013

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The successful production, via two different oxidation processes, of metal-oxide-metal (MOM) diodes is presented. An innovative reactive ion etching and plasma assisted regrowth process has been used to provide oxides, which are in the thickness range 4.0-5.1 nm. These are thinner and physically more uniform than oxides grown in a furnace, resulting in diodes which should conduct via electron tunnelling across the MOM junction. Transmission electron microscopy analysis has been used in conjunction with time of flight secondary ion mass spectrometry analysis to verify oxide thickness and uniformity.

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“…[1][2][3][4][5] The device consists of a thin dielectric layer (a few nanometers thick) sandwiched between two metal electrodes, with current flowing between the electrodes depending on the bias voltage polarity.…”

Section: Main Textmentioning

confidence: 99%

High-performance rectifiers fabricated on a flexible substrate

Etor

Dodd

Wood

et al. 2016

Applied Physics Letters

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Very-high-speed metal-oxide-metal diodes on W-Ni, Pt-Ti, and Pt-W contacts

Cited by 4 publications

References 8 publications

High-Performance Atomic Layer Deposited Al2O3 Insulator Based Metal-Insulator-Metal Diode

High-Performance Atomic Layer Deposited Al2O3 Insulator Based Metal-Insulator-Metal Diode

Controlled reactive ion etching and plasma regrowth of titanium oxides of known thickness for production of metal-oxide-metal diodes

High-performance rectifiers fabricated on a flexible substrate

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