VHF Single Crystal Silicon Capacitive Elliptic Bulk-Mode Disk Resonators—Part II: Implementation and Characterization

Bulk disc resonators radial and wineglass mode resonance characterization for mass sensing applications

“…Due to the advantages of crystalline Si and high Q factors of disc resonator in both radial and wineglass mode, they have been previously studied for sensing applications (Lee and Seshia 2009;Pourkamali et al 2004). The authors have used very small gaps (nm) that result in extremely high Q.…”

Anchor Loss in MEMS/NEMS

“…An example of the second strategy is a disk resonator operating in its elliptic bulk mode (Fig. 4) [12,13]. In theory, a resonant node is a point with no dimension, and thus a support beam should be designed as slim as possible.…”

“…4 (a) SEM picture of a disk resonator [13]; (b) the elliptic bulk mode of the disk resonator fixed at one of its resonant nodes through a slim support beam to the substrate [12] improving the Q anchor of a MEMS/NEMS resonator are well established. The main research focus has so far been on fabrication technology development for reducing fabrication variations among fabricated MEMS/NEMS resonators so as to reduce performance variations and the Q anchor variations among them and replacing silicon with other desirable materials for increasing the Q anchor of MEMS/NEMS resonators.…”

Integrated aluminum nitride piezoelectric microelectromechanical system for radio front ends

“…It has been proven to have high sound velocity ͑10 km/ s͒, high resistivity ͑10 13 ⍀ m͒, and good piezoelectric coupling coefficient, which has also made it the material of choice for a commercially successful rf resonator product such as the FBAR. The use of piezoelectric transduction renders the fabricated resonators easily interfaced with current 50 ⍀ rf systems ͑differently from what occurs in high impedance pure silicon-based technologies that use electrostatic transduction [3][4][5] ͒ and can provide MEMS switches with large forces and increased reliability. The ease of manufacturing AlN devices and integrating them with CMOS electronics 6,7 make AlN the preferred material for the demonstration of fully integrated, small form-factor rf solutions.…”