Vibrational properties of arsenic on Si(111)

Wilhelm, H.; Richter, Wolfgang; Rossów, U.; Zahn, Dietrich R. T.; Woolf, D. A.; Westwood, D.I.; Williams, R. H.

doi:10.1016/0039-6028(91)91054-2

Cited by 23 publications

(2 citation statements)

References 5 publications

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“…According to the literature, the peak observed around 250 cm À1 can be assigned to the broad amorphous phase of selenium, while that at 235 cm À1 corresponds to the polycrystalline trigonal Se (t-Se) phase as a result of photo-crystallization. The t-Se feature becomes more pronounced and two resolved bands appear at 237 cm À1 and 233 cm À1 [12,14]. Although a plasma line could be observed around 235 cm À1 on the a-Se spectra, superimposed to the t-Se peak, it is technically impossible to separate and therefore is not subtracted.…”

Section: Ramanmentioning

confidence: 94%

Characterizations of a-Se based photodetectors using X-ray photoelectron spectroscopy and Raman spectroscopy

Okano

Saito

Mine

et al. 2007

Journal of Non-Crystalline Solids

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Section: Ramanmentioning

confidence: 94%

Characterizations of a-Se based photodetectors using X-ray photoelectron spectroscopy and Raman spectroscopy

Okano

Saito

Mine

et al. 2007

Journal of Non-Crystalline Solids

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“…The amorphous As layer can be removed easily by annealing it at about 350 1C in UHV environment [2]. Many investigators have examined about properties of the amorphous As layer for the use of passivation layer [3][4][5][6][7]. Further, using the amorphous As layer as a mask, photolithographic patterning was achieved by Husby et al [8].…”

Section: Introductionmentioning

confidence: 99%

Formation of patterned Ga InAs/GaAs hetero-structures using amorphous arsenic mask

Noritake

Yamada

Tabuchi

et al. 2007

Journal of Crystal Growth

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Growth and Characterization of InAs Quantum Dots on Silicon

Ankudinov

Bensing

Wagner

et al. 2001

phys. stat. sol. (b)

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We present a comprehensive investigation of molecular beam epitaxial (MBE) grown InAs quantum dots (QD) on silicon (001) and (111) by reflection high energy electron diffraction (RHEED) and Raman spectroscopy in UHV environment and ex-situ by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Two different ways were developed to prepare up to 10 11 cm --2 InAs QDs on Si(001). One is the conventional mode by exceeding a critical thickness of deposition at which 2D growth changes towards a 3D growth mode. A second way is a dewetting transition, induced by cooling an approximately 1 ML thin 2D InAs layer from growth temperature below a critical temperature at which RHEED indicates the formation of nanoislands. Samples grown in both manners show significant differences in morphology and shape though RHEED, TEM and Raman studies correspondingly indicate strain relaxation. On Si(111) InAs grows in the common temperature range for InAs growth ($400 C) in flat clusters separated by deep trenches. A previous passivation of the Si(111) surface with arsenic at~700 C on the other hand leads to the formation of large InAs nanocrystals.

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Vibrational properties of arsenic on Si(111)

Cited by 23 publications

References 5 publications

Characterizations of a-Se based photodetectors using X-ray photoelectron spectroscopy and Raman spectroscopy

Characterizations of a-Se based photodetectors using X-ray photoelectron spectroscopy and Raman spectroscopy

Formation of patterned Ga InAs/GaAs hetero-structures using amorphous arsenic mask

Growth and Characterization of InAs Quantum Dots on Silicon

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