Visible electroluminescence on FTO/thin SRO/n-Si structures

Leyva, Karim Monfil; Aceves-Mijares, M.; Yu, Zhinong; Flores, Francisco; Morales–Sánchez, A.; Alcantara, S.

doi:10.1016/j.mseb.2010.03.062

Cited by 3 publications

(1 citation statement)

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“…EL emission occurs under reverse bias and is originated due to charge injection through conductive pathways and radiative recombination processes between energetic states of traps or defects [ 53 ]. It has been reported that when the electroluminescent emission is presented in the form of points, it originates from the efficiently excited emission of defects in the oxide and/or of a few Silicon nanoparticles (Si-nps) [ 54 ].…”

Section: Resultsmentioning

confidence: 99%

Blue Electroluminescence in SRO-HFCVD Films

et al. 2021

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In this work, electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM)-type structures was studied. These structures were fabricated with single- and double-layer silicon-rich-oxide (SRO) films by means of Hot Filament Chemical Vapor Deposition (HFCVD), gold and indium tin oxide (ITO) were used on silicon and quartz substrates as a back and front contact, respectively. The thickness, refractive indices, and excess silicon of the SRO films were analyzed. The behavior of the MIS and MIM-type structures and the effects of the pristine current-voltage (I-V) curves with high and low conduction states are presented. The structures exhibit different conduction mechanisms as the Ohmic, Poole–Frenkel, Fowler–Nordheim, and Hopping that contribute to carrier transport in the SRO films. These conduction mechanisms are related to the electroluminescence spectra obtained from the MIS and MIM-like structures with SRO films. The electroluminescence present in these structures has shown bright dots in the low current of 36 uA with a voltage of −20 V to −50 V. However, when applied voltages greater than −67 V with 270 uA, a full area with uniform blue light emission is shown.

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Section: Resultsmentioning

confidence: 99%