Down-Conversion Effect Created by SiOx Films Obtained by HFCVD and Applied over Pn-Junctions

Ojeda-Durán, E.; Leyva, Karim Monfil; Carrillo-López, J.; Benítez-Lara, A.; Garcı́a-Salgado, G.; Luna-López, J. A.

doi:10.1007/s12633-018-0029-4

Cited by 5 publications

(5 citation statements)

References 34 publications

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“…In addition, previous studies have shown that using a SiO x film as a top coating on silicon solar cells can improve the J-V curve and external quantum efficiency (EQE) values. In these cases, SiO x has been obtained by LPCVD and HFCVD, resulting in efficient photoluminescence and transmittance values [11,12].…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of an Inverted Perovskite Solar Cell Using a SiOx Layer as Down-Conversion Energy Material to Improve Efficiency and Stability

Paz Totolhua,

Carrillo López,

Benítez Lara

et al. 2023

Materials

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Inverted perovskite solar cells (PSCs) have gained much attention due to their low hysteresis effect, easy fabrication, and good stability. In this research, an inverted perovskite solar cell ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Ag structure was simulated and optimized using SCAPS-1D version 3.3.10 software. The influence on the device of parameters, including perovskite thickness, total defect density, series and shunt resistances, and operating temperature, are discussed and analyzed. With optimized parameters, the efficiency increased from 13.47% to 18.33%. Then, a new SiOx/ITO/PEDOT:PSS/CH3NH3PbI3/PCBM/Ag device was proposed which includes a silicon-rich oxide (SiOx) layer. This material was used as the down-conversion energy material, which converts high-energy photons (ultraviolet UV light) into low-energy photons (visible light), improving the stability and absorption of the device. Finally, with SiOx, we obtained an efficiency of 22.46% in the simulation. Therefore, the device with the SiOx layer is the most suitable as it has better values for current density–voltage output and quantum efficiency than the device without SiOx.

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Section: Introductionmentioning

confidence: 99%

Numerical Simulation of an Inverted Perovskite Solar Cell Using a SiOx Layer as Down-Conversion Energy Material to Improve Efficiency and Stability

Paz Totolhua,

Carrillo López,

Benítez Lara

et al. 2023

Materials

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“…The first contribution is the dispersion of incident photons in areas not covered by gold contacts, interaction with photogenerated electrons [ 37 ], and the result of the charge-discharge process of Si-ncs [ 26 ], where the absorption of light (photon density) generates electron-hole pairs as a consequence of the discharge process from the Si-ncs, and a photocurrent is generated in the structure. Second, due to the nature of the SRO material, it shows interesting electrical properties, such as charge trapping and non-trapping; due to the defects mentioned in photoluminescence, these allowable electronic states placed within the wide band gap of the SRO material facilitate the photodetection of light signals in MIS-type structures, and moreover, induce the formation of P-N intrinsic regions [ 6 ] when it is reversely polarized. This creates a larger depletion space charge region that can absorb incident photons to create electron-hole pairs, thereby increasing the photocurrent [ 38 ].…”

Section: Discussionmentioning

confidence: 99%

“…Photons with this wavelength could be absorbed by the induced P-N junction formed at the interface between the SRO film and n-type silicon, as shown in Figure 20 . This property suggests that the Au/SRO/Si structure may be better suited to generate the “down-conversion” effect, which then contributes to the absorption of these photodetector devices [ 6 ]. The emission mechanism present in the PL spectra is related to some defects, such as neutral oxygen vacancies (NOV), weak oxygen bonds (WOB), non-bonded hollow oxygen centers (NBOHC), and positively charged oxygen vacancies [ 42 , 43 , 44 , 45 , 46 , 47 , 48 ].…”

Section: Discussionmentioning

confidence: 99%

“…This fact has motivated extensive research by studying its fundamental optical and electronic properties. Thus, it makes this material very attractive for the manufacture of optoelectronic devices, such as photodetectors, solar cells, and light emitters [ 5 , 6 , 7 ]. The SRO films can be obtained by various techniques, such as sputtering [ 8 , 9 ], plasma-enhanced chemical vapor deposition (PECVD) [ 10 , 11 ], low-pressure chemical vapor deposition (LPCVD) [ 12 , 13 ], and hot filament chemical vapor deposition (HFCVD) [ 14 , 15 ].…”

Section: Introductionmentioning

confidence: 99%

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MIS-Like Structures with Silicon-Rich Oxide Films Obtained by HFCVD: Their Response as Photodetectors

Conde

López

Simón

et al. 2022

Sensors

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MIS-type structures composed of silicon-rich oxide (SRO), thin films deposited by hot filament chemical vapor deposition (HFCVD), show interesting I-V and I-t properties under white light illumination and a response as photodetectors. From electrical measurements, it was found that at a reverse bias of −4 V, the illumination current increased by up to three orders of magnitude relative to the dark current, which was about 82 nA, while the photogenerated current reached a value of 25 μA. The reported MIS structure with SRO as the dielectric layer exhibited a hopping conduction mechanism, and an ohmic conduction mechanism was found with low voltage. I-t measurements confirmed the increased photogenerated current. Furthermore, the MIS structure, characterized by current-wavelength (I-λ) measurements, exhibited a maximum responsivity value at 254 mA/W, specific detectivity (D*) at 2.21 × 1011 cm Hz1/2 W−1, and a noise equivalent power (NEP) of 49 pW at a wavelength of 535 nm. The structure exhibited good switching behavior, with rise and fall times between 120 and 150 ms, respectively. These rise and decay times explain the generation and recombination of charge carriers and the trapping and release of traps, respectively. These results make MIS-type structures useful as photodetectors in the 420 to 590 nm range.

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“…[ 25,49 ] Another prospect for these Si‐compound thin films is their application to improve solar cell efficiency as antireflective or downshifting layers, which absorb UV radiation and re‐emit it in the visible region. [ 54 ] Recently, Si NPs have been tested in different structures to develop photovoltaic devices, such as n‐type Si QDs/p‐type c‐Si heterojunction, p‐type Si QDs/n‐type c‐Si heterojunction, and p– i –n diodes. [ 55,56 ] Efficiencies below 15% have been reported in structures of these types; however, the main limitation is still the difficulty of transferring the electric charge due to dielectric matrices.…”

Section: Embedding Qds and Nps In Thin‐film Matrices And Their Relati...mentioning

confidence: 99%

Silicon Compound Nanomaterials: Exploring Emission Mechanisms and Photobiological Applications

Dutt,

Salinas,

Martínez-Tolibia

et al. 2023

Advanced Photonics Research

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After the first visible photoluminescence (PL) from porous silicon (pSi), continuous efforts are made to fabricate Si‐based compound nanomaterials embedded in matrices such as oxide, nitride, and carbide to improve optical performance and industrial acceptability. These nanomaterials’ functional and desired properties (nanoparticles and quantum dots embedded in matrices) can vary significantly when embedded in technologically relevant matrices. However, exploring the exact emission mechanisms is one of the remaining challenges from the past few decades. To cover this gap, this review discusses the morphological and optoelectronic properties of Si‐based compound nanomaterials and their correlation with the quantum confinement effect and different surface states to find precise emission mechanisms. One of the biggest challenges of using silicon nanomaterials in the biological sector is the development of sensitive materials of low/acceptable toxicity for identifying target analytes either inside/outside the biological platforms. In this scenario, silicon‐based compound matrices can offer different characteristics and advantages depending on their size configurations and PL emission mechanisms. On the other hand, a proper understanding of these multifaceted silicon nanomaterials’ optical properties (emission mechanisms) can be exploited for pathogen detection and in situ applications in cells and tissues, embarking on a new era of bioimaging technology.

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Down-Conversion Effect Created by SiOx Films Obtained by HFCVD and Applied over Pn-Junctions

Cited by 5 publications

References 34 publications

Numerical Simulation of an Inverted Perovskite Solar Cell Using a SiOx Layer as Down-Conversion Energy Material to Improve Efficiency and Stability

Numerical Simulation of an Inverted Perovskite Solar Cell Using a SiOx Layer as Down-Conversion Energy Material to Improve Efficiency and Stability

MIS-Like Structures with Silicon-Rich Oxide Films Obtained by HFCVD: Their Response as Photodetectors

Silicon Compound Nanomaterials: Exploring Emission Mechanisms and Photobiological Applications

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