Visible-light-emitting diodes based on microcavity concepts

Dumitrescu, M.; Saarinen, M.; Vilokkinen, V.; Sipilae, Pekko; Guina, Mircea; Pessa, M.

doi:10.1117/12.426832

Cited by 5 publications

(1 citation statement)

References 14 publications

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“…Figure 5 shows that the coupling efficiency 0.5 NA POF transmitter remained at a high value (>50%) over a wide driving-current range (10 -90 mA) due to the higher half-power angle and output power. This coupling efficiency is comparable to similar data under the same conditions for 0.5 NA POF and 84 mm devices reported by Dumitrescu et al, 16) where the coupling efficiency was less than 35% from 0 to 40 mA operation current. 7 and 622 Mbit/s was achieved.…”

Section: Resultssupporting

confidence: 91%

High-Performance 650 nm Resonant-Cavity Light-Emitting Diodes for Plastic Optical-Fiber Application

Lee

Cheng

et al. 2007

jjap

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AlGaInP-based resonant-cavity light-emitting diodes (RCLEDs) with high power and high speed have been fabricated. In this study, the RCLEDs were designed with different light-output aperture sizes 84, 60, and 40 µm, for different applications on plastic optical fibers. Small-signal modulation bandwidths as high as 310 MHz at a forward current of 20 mA and an output power as high as 1.5 mW can be achieved for devices with 40 µm apertures. The devices with 84 µm apertures had an output power of more than 3.5 mW at a driving current of 20 mA and a maximum efficiency of over 12% with an epoxy-encapsulated package. The devices with 40 µm apertures satisfied with the IEEE 1394b s400 standard. Furthermore, the devices showed stable coupling efficiency for various currents and output powers at different ambience temperatures. In addition, the lifetime of devices is over 1300 h, and the power decay is less than 0.5 dB at 85 °C for a 40 mA driving current.

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Section: Resultssupporting

confidence: 91%

High-Performance 650 nm Resonant-Cavity Light-Emitting Diodes for Plastic Optical-Fiber Application

Lee

Cheng

et al. 2007

jjap

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Red Wavelength Range Microcavity Emitters

Dumitrescu

Saarinen

Xiang

et al. 2001

phys. stat. sol. (a)

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Subject classification: 42.55.Px; 85.60.Jb; S7.12State-of-the-art resonant cavity light emitting diodes (RC-LEDs) and vertical cavity surface emitting lasers (VCSELs) for the red wavelength range are presented in the paper. Our red wavelength range RC-LEDs were mainly intended for short-haul communication systems on polymethyl methacrylate plastic optical fiber and were optimized accordingly. They achieve, under different structure and working regime variants, high output power (15 mW), high external efficiency (9.5%), record small-signal modulation bandwidth (f À3dB up to 350 MHz), error free back-to-back transmission rates beyond 622 Mbit/s, adjustable far-field pattern and good POF coupling efficiency with reasonably wide tolerances and without using auxiliary optics. In view of the possible use of graded-index POFs, free-space transmission and other high bandwidth or high spectral purity applications, VCSELs in the red wavelength range were also realized. They have achieved sub-milliamp room-temperature (RT) continuous-wave (CW) lasing for an 8 mm diameter emission window and exhibited an external quantum efficiency of 6.65% for 10 mm devices in RT CW operation. The VCSELs, being only assessment devices, were not optimized, and significant improvement in performance characteristics is predicted for the optimized structures.

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Effect of top distributed Bragg reflectors on the performance of 650 nm AlGaInP resonant cavity light-emitting diodes

Yang

Yuzhu

et al. 2010

Optoelectron. Lett.

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Three kinds of 650 nm AlGaInP resonant cavity light-emitting diodes (RCLEDs) are fabricated by metal organic chemical vapor deposition (MOCVD) with different numbers of pairs of top distributed Bragg reflectors (DBRs), which are 15, 10 and 5, respectively. By comparing the full width at half maximum (FWHM), light power and the angular far-field emission of the devices, the device with 15 pairs of top DBRs shows the best performance. Its FWHM is 13.4 nm and the light power is 0.63 mW at a driving current of 30 mA.The resonant cavity light-emitting diode (RCLED) proposed by Schubert et al. [1] is a good choice between LED and LD. Because it has a narrower spectrum and better directionality than LED, and is cheaper than LD, RCLED has attracted much attention in recent years [2,3] . The RCLED consists of a top reflective mirror, a bottom reflective mirror and a cavity with active layers. The distributed Bragg reflector (DBR) is usually used as the reflective mirror. The reflectivity of the bottom DBR is designed as high as possible, even up to approximate 100%, while the top one can be designed according to the device requirements [4,5] . Thus, the top DBR has a significant impact on the characteristics of RCLED, such as the emission spectrum, the output light power and the optical field distribution.In this letter, we study the effect of the top DBR pairs on RCLED device performance. Three samples of 650 nm RCLED which have different pair numbers of top DBRs are fabricated by means of metal organic chemical vapor deposition (MOCVD). The results show that the device with 15 pairs of top DBRs shows the best performance.As shown in Fig.1, the epitaxy structure of RCLED is fabricated by MOCVD on the 2 inch n + -type GaAs substrate. At first, 34 pairs of AlAs-Al 0.5 Ga 0.5 As bottom DBR layers grow on the GaAs buffer, and then the active layer grows, including three 5 nm wide compressive strain Ga 0.5 In 0.5 P-(Al 0.5 Ga 0.5 ) 0.5 In 0.5 P multiple quantum wells (MQWs). After the growth of (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P-Al 0.5 In 0.5 P top DBR layers, Mg-doped p-type GaP is deposited as window layers. After the epitaxial growth, p-type AuZnAu top electrode and ntype AuGeNi bottom electrode are formed. Finally, the chips are cutting into the size of 300 m 300 m for device testing.In order to study the influence of top DBRs on RCLED characteristics, 3 samples are made, in which all the other structure parameters are the same, except that the pair number of top DBRs in sample#1 is 15, sample#2 is 10, and sample#3 is 5.The spectrum and optical field distribution of samples are tested by the PMS-50 spectroscope and LED620 light intensity tester (Everfine), and the output light power is measured in an integrating sphere.

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Visible-light-emitting diodes based on microcavity concepts

Cited by 5 publications

References 14 publications

High-Performance 650 nm Resonant-Cavity Light-Emitting Diodes for Plastic Optical-Fiber Application

High-Performance 650 nm Resonant-Cavity Light-Emitting Diodes for Plastic Optical-Fiber Application

Red Wavelength Range Microcavity Emitters

Effect of top distributed Bragg reflectors on the performance of 650 nm AlGaInP resonant cavity light-emitting diodes

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