Thin thermally grown SiO 2 layers have been enriched with Si up to ∼15 at.% by Si ion implantation at room temperature. X-ray photoelectron spectroscopy (XPS) was used to monitor the composition changes caused in the layers by bombardment with 3 keV Ar ions at elevated temperatures. Argon ion irradiation of pure SiO 2 does not lead to the formation of Si nanoprecipitates. That was the case also for room-temperature Ar bombardment of Si-rich layers. Their 'hot' irradiation with Ar ions was found to enhance considerably the formation of segregated Si nanophase inclusions. The process starts at ∼500• C and becomes strongly pronounced at 650• C. At this temperature ion-beam-induced crystallization of Si nanoprecipitates may be achieved. The results obtained are explained in the framework of the physical model, based on the irradiation-enhanced diffusion of excess Si atoms.