1992
DOI: 10.1143/jjap.31.l365
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Visible Photoluminescence from Si Microcrystals Embedded in SiO2 Glass Films

Abstract: The design and operation of a CO:! laser based on a glow discharge in a metal tube is described. Up to 15 W power was obtained. The operating voltage is low compared with a similar discharge in an insulating tube.

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Cited by 91 publications
(14 citation statements)
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“…There have been several reports on embedding Si nanocrystals into SiO 2 films to generate visible PL [82,83]. Due to the much larger band gap of bulk SiO 2 (9.3 eV) [84] compared to that of Si (1.12 eV) [12], carriers can be confined in the Si crystallites.…”
Section: Sic Embedded In Siomentioning
confidence: 99%
“…There have been several reports on embedding Si nanocrystals into SiO 2 films to generate visible PL [82,83]. Due to the much larger band gap of bulk SiO 2 (9.3 eV) [84] compared to that of Si (1.12 eV) [12], carriers can be confined in the Si crystallites.…”
Section: Sic Embedded In Siomentioning
confidence: 99%
“…Methods of plasma-enhanced chemical vapor deposition were used as well, also allowing the doping of layers by impurities as nitrogen and hydrogen [8,9]. Another effective method is the co-sputtering of silicon dioxide and pure silicon [10][11][12]. In all cases the option of thermal anneal of produced structures, typically in a range of temperatures up to 1200 1C, is employed beneficially.…”
Section: Introductionmentioning
confidence: 99%
“…9 -11,13 The formation of Si nanocrystals embedded in SiO 2 was claimed when the substrate temperatures during deposition exceeded 400°C. 9,10,13 However, deposition of co-sputtered Si and SiO 2 without intentional heating of the substrates does not lead to the appearance of nanocrystals in the as-prepared layers. 11 One can conclude that crystallization is provided by a combination of thermal and ion-induced processes.…”
Section: Discussionmentioning
confidence: 99%