Voltage-based maximum power point tracking control of PV system

Abstract

Photovoltaic (PV) generators exhibit nonlinear v-i characteristics and maximum power (MP) points that vary with solar insolation. An intermediate converter can therefore increase efficiency by matching the PV system to the load and by operating the solar cell arrays (SCAs) at their maximum power point. An MP point tracking algorithm is developed using only SCA voltage information thus leading to current sensorless tracking control. The inadequacy of a boost converter for array voltage based MP point control is experimentally verified and an improved converter system is proposed. The proposed converter system results in low ripple content, which improves the array performance and hence a lower value of capacitance is sufficient on the solar array side. Simplified mathematical expressions for a PV source are derived. A signal flow graph is employed for modeling the converter system. Current sensorless peak power tracking effectiveness is demonstrated through simulation results. Experimental results are presented to validate the proposed method.

Optimal control of a multilevel DC-link converter photovoltaic system for maximum power generation

“…Some improvements have been proposed for reducing the number of oscillations around MPP (e.g. [18,19]), but a slow speed of the response may result in an incorrect MPPT if the changes of irradiance are rapid.…”

Simulink model of PV cell-based Active Generator using MATLAB

“…When doped with phosphorus, arsenic or antimony the silicon becomes an n-type semiconductor, and when doped with boron, Aluminum, Indium, or Gallium, it forms a p-type semiconductor [9]. If a p-type semiconductor is brought into intimate contact with one of the n-type, they form a p-n (or n-p) junction.. [10]. To be formed from two different semiconductor materials, such as CdS and Cu 2 S. This is known as a hetero Jn.…”

Modeling and Parameter Extraction of PV Modules Using Genetic Algorithms and Differential Evaluation

“…The 7unknown parameters in the model are: the photo generated current IPH; the series resistance RS; the shunt (or parallel) resistance RP; the reverse saturation current I 01 and the ideality factor n1 of the diffusion diode; and the reverse saturation current I 02 and the ideality factor n2 of the recombination diode. n1 is oft-en assumed to be equal to 1 by many authors, in accordance with the diffusion theory of p-n junctions [11], where as n 2 is sometimes set equal to 2, in accordance with the theory of recombination via traps [12]. The thermal voltage VT=kBT/qe, where T is the p-n junction temperature (considered to be a known or controlled quantity), kB is Boltzmann's constant, and qe is the elementary charge .The parameters in the two-diode model depend on the irradiance and cell temperature [6,7,8].…”