Voltage change across the self-coupled semiconductor laser

Mitsuhashi, Yoshinobu; Shimada, Junichi; Mitsutsuka, S.

doi:10.1109/jqe.1981.1071267

Cited by 48 publications

(15 citation statements)

References 18 publications

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“…For the lasers tested, response was maximized when the waveplate axis coincided with the polarization axis (no polarization rotation) and minimized when the waveplate axis was 45" from the polarization axis (return polarization rotated 900). An explanation of our result lies in one of the possible mechanisms for self-detection [6] : enhanced stimulated emission from the return beam depletes carriers and decreases the quasi-Fermi level separation, leading to a reduction in terminal voltage. Gain coeffkients for TE and TM polarizations are not typically equal in laser diodes [7] (due to waveguide losses and lattice strains).…”

mentioning

confidence: 83%

Magneto-optic rotation sensor using a laser diode as both source detector

Rochford

Rose

1996

Optical Fiber Sensors

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We show that a laser diode can serve as both the emitter and detector in a diffractionbased magneto-optic rotation sensor. Self-detection devices have sufficient linearity and stability for applications with discrete measurands. Signal-to-noise ratios greater than 50 dB (1 Hz bandwidth) are possible for binary measurands, and a fiber optic rotation sensor with a signal-to-noise ratio of 18 dB in a 1.25 kHz bandwidth is demonstrated.

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mentioning

confidence: 83%

Magneto-optic rotation sensor using a laser diode as both source detector

Rochford

Rose

1996

Optical Fiber Sensors

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“…The OES as a function of pump current can take various shapes [1,4]. The OES usually reaches a maximum near the lasing threshold.…”

Section: 37835mentioning

confidence: 99%

“…The potential difference at the p-n-junction during laser generation on its own mirrors and with an external reflector is called the optoelectronic signal (OES). The absolute value of the OES can reach tens [1] and sometimes hundreds [3] of millivolts.The OES as a function of pump current can take various shapes [1,4]. The OES usually reaches a maximum near the lasing threshold.…”

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confidence: 99%

Influence of radiation fluctuations on the magnitude of optoelectronic signal in semiconductor lasers with external optical feedback

Karikh

Афоненко

2008

J Appl Spectrosc

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621.378.35Numerical modeling of dynamical processes in semiconductor lasers with external delayed optical feedback has been performed on the basis of the rate equations taking into account the quantum fluctuations of radiative transition rates. It has been shown that the nature of the optoelectronic signal as a function of pump current is determined by the magnitude of the optoelectronic coupling and corresponds to the behavior of the autocorrelation function of the radiation. It has been found that the radiation coherence decreases substantially with strong optical feedback. Experimental measurements confirming the theoretical results have been performed.Introduction. Phenomena responsible for external optical feedback (OFB) in lasers have recently been extensively studied. Semiconducting lasers are especially sensitive to OFB because of the low resonator gain. OFB strongly affects their threshold, power, spectral, noise, coherence, and other characteristics. The high sensitivity of semiconducting lasers to back reflected radiation can be used to study the internal parameters of the laser active region and to solve applied problems, in particular, to construct a new generation of sensors of various physical quantities (microdisplacements, microvibrations and rates of reflecting objects, their surface conditions) and to create multistable optical logical elements, etc. [1,2].The principal methods of studying the reaction of a laser to external OFB involve recording current changes through the laser, potentials at the p-n-junction, and the laser output power upon adding an external reflector. The first two methods, in contrast with the third, do not require the use of an additional photodetector. The most convenient method is recording potential changes at a given current through the laser because the laser is usually fed by a current generator. The laser fulfills two functions as a source and receiver of its own radiation. The potential difference at the p-n-junction during laser generation on its own mirrors and with an external reflector is called the optoelectronic signal (OES). The absolute value of the OES can reach tens [1] and sometimes hundreds [3] of millivolts.The OES as a function of pump current can take various shapes [1,4]. The OES usually reaches a maximum near the lasing threshold. Then, the OES either stabilizes or decreases smoothly or erratically as the pump current increases. Sometimes the OES increases smoothly with increasing pump current. The decrease of OES was explained [4] by the photoconductivity and leakage of current. The erratic character of the function was related to multimode lasing. Modern laser heterostructures have a high electronic limitation. The coefficient of carrier injection into the active layer is close to unity. Therefore, the effect of current leakage on the OES in them is practically avoided.It was hypothesized [1] that unstable lasing in the external resonator can influence the laser electrical response. Modes for which the phase advance in the external resonator is...

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“…14 Use of the reflectivity modulation for readback of optical disks with a laser diode in the far field 15 and near field 16,17 has also been previously demonstrated. Operating near laser threshold, the reflection readback signal can be measured by monitoring the output power from the back facet.…”

Section: ͓S0003-6951͑99͒04734-8͔mentioning

confidence: 99%

High-power laser light source for near-field optics and its application to high-density optical data storage

Partovi¹,

Peale²,

Wuttig³

et al. 1999

Applied Physics Letters

165

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A laser light source for high-resolution near-field optics applications with an output power exceeding 1 mW (104 times the power from previous sources) and small (300 nm square to less than 50 nm square) output beam size is demonstrated. The very-small-aperture laser (VSAL) tremendously expands the range of applications possible with near-field optics and increases the signal-to-noise ratios and data rates obtained in existing applications. As an example, 250-nm-diam marks corresponding to 7.5 Gb/in.2 storage density have been recorded and read back in reflection and transmission on a rewritable phase-change disk at 24 Mb/s with a 250-nm-square aperture VSAL. VSALs potentially enable data storage densities of over 500 Gb/in.2 (up to 100 times today’s magnetic or optical storage densities).

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Voltage change across the self-coupled semiconductor laser

Cited by 48 publications

References 18 publications

Magneto-optic rotation sensor using a laser diode as both source detector

Magneto-optic rotation sensor using a laser diode as both source detector

Influence of radiation fluctuations on the magnitude of optoelectronic signal in semiconductor lasers with external optical feedback

High-power laser light source for near-field optics and its application to high-density optical data storage

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