Voltage-controlled multiple-valued logic design using negative differential resistance devices

Gan, Kwang–Jow; Tsai, Cher Shiung; Chen, Yan Wun; Yeh, Wen Kuan

doi:10.1016/j.sse.2010.08.007

Cited by 40 publications

(20 citation statements)

References 18 publications

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“…This enables us to demonstrate some of astonishing functionalities beyond the binary logic system. For instance, multiple logic functions 26 – 28 , multivalued logics 29 – 31 , and stochastic data processes 32 are prominent representatives that can put a step closer to the future electronic computing system. Furthermore, since the usage of the NDT/NDR device allows a high-speed operation of the electronic circuit system ( e.g ., high-frequency oscillators 33 – 35 , high-speed multiplexers 36 , 37 , and fast logic switches 38 , 39 etc .…”

Section: Introductionmentioning

confidence: 99%

Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device

Lee

Kim

2017

Sci Rep

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High-performance negative-differential transconductance (NDT) devices are fabricated in the form of a gated p+-i-n+ Si ultra-thin body transistor. The devices clearly display a Λ-shape transfer characteristic (i.e., Λ-NDT peak) at room temperature, and the NDT behavior is fully based on the gate-modulation of the electrostatic junction characteristics along source-channel-drain. The largest peak-to-valley current ratio of the Λ-NDT peak is greater than 104, the smallest full-width at half-maximum is smaller than 170 mV, and the best swing-slope at the Λ-NDT peak region is ~70 mV/dec. The position and the current level of the Λ-NDT peaks are systematically-controllable when modulating the junction characteristics by controlling only bias voltages at gate and/or drain. These unique features allow us to demonstrate the multivalue logic functions such as a tri-value logic and a quattro-value logic. The results suggest that the present type of the Si Λ-NDT device could be prospective for next-generation arithmetic circuits.

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Section: Introductionmentioning

confidence: 99%

Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device

Lee

Kim

2017

Sci Rep

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“…Recently, negative differential resistance (NDR) devices have attracted considerable attention owing to their folded current–voltage ( I – V ) characteristic (N-shaped I – V curve), which presents multiple threshold voltage values123456789101112131415161718192021222324252627. Because of this remarkable property, studies associated with the NDR devices have been explored for realizing multi-valued logic (MVL) applications17111326.…”

mentioning

confidence: 99%

“…Because of this remarkable property, studies associated with the NDR devices have been explored for realizing multi-valued logic (MVL) applications17111326. Compared to conventional binary logic systems, MVL systems can transmit more information with fewer interconnect lines between devices by transferring multi-valued signals, thereby reducing the complexity of modern integrated circuit design.…”

mentioning

confidence: 99%

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

et al. 2016

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Recently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

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“…[ 84,100 ] In this way, vdW Esaki tunnel diodes were constructed, which possess prominent negative differential resistance (NDR) phenomenon that can be potentially used in radio frequency oscillators and multivalued logic applications. [ 101–105 ] Moreover, such band‐to‐band tunneling (BTBT) is based on cold charge injection mechanism, which can be further utilized to construct tunnel field‐effect transistors (TFETs) with smaller subthreshold swing values (<60 mV dec −1 ) and much lower power consumption (Figure 1m). [ 86,106,107 ]…”

Section: Band Alignmentmentioning

confidence: 99%

Recent Advances in Two‐Dimensional Heterostructures: From Band Alignment Engineering to Advanced Optoelectronic Applications

Sun

Zhu

et al. 2021

Adv Elect Materials

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Dynamically engineering the band alignment between materials, especially 2D semiconductors, is critically important for the design of novel devices with superior functions. Here, a review of band alignment engineering in 2D heterostructures and the derived device applications, mainly outlining their potential as photodetectors, photovoltaics, and light‐emitting devices, is provided. Various approaches are summarized, through exploiting the advantages of each component and different device structure, to further improve the performances of the optoelectronic devices. The authors also provide their perspectives on future developments of photoelectric chips based on the newly designed optoelectronic devices.

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Voltage-controlled multiple-valued logic design using negative differential resistance devices

Cited by 40 publications

References 18 publications

Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device

Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Recent Advances in Two‐Dimensional Heterostructures: From Band Alignment Engineering to Advanced Optoelectronic Applications

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