W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology

Abstract

We report the first W-band GaN receiver components using a next generation, highly scaled GaN device technology. This technology (40nm, f T = 220 GHz, f max = 400 GHz, V brk > 40V) enables receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability. This paper includes results for a 4 and a 5 stage low noise amplifier (LNA) (gain over 5 dB/stage at 110 GHz), a single-pole single-throw (SPST) and a single-pole double-throw (SPDT) switch with loss of 0.9 dB and 1.3 dB respectively and a reflective type phase shifter.

State of the Art Sub-Terahertz Switching Solutions

“…GaN high electron mobility field effect transistors (HEMT) achieve transition frequencies and noise figures comparable to other semiconductors such as SiGe, InP or GaAs while at the same time their breakdown voltages are around five times higher. GaN λ/4 shunt switch proposed in [33] offers lower insertion loss (0.9 -1.4 dB in 60-110 GHz frequency range) compared to all previously considered technologies with high IP1dB over 27 dBm. However its isolation is very low, over 9 dB in whole band.…”

“…Another semiconductor material used for mm-wave switching is a GaN [33][34][35]. It offers high bandgap and high thermal conductivity which makes it suitable for high power density devices.…”

W-Band Single-Pole Four-Throw Switch for Multichannel High Power Transceiver Chipset Design

“…These shortcomings of silicon-based active or passive device result in the limitation of the application of silicon-based switches. There are several reported MMW switches fabricated using III-V compound semiconductor process [18][19][20][21]. In those articles, the layout and circuit model of transistor are redesigned and optimized specially for switch applications.…”

High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs

“…For instance, in space applications, the traveling wave tube amplifiers (TWTA) are still used, because of the high PAE. Even though attractive efficiencies of GaN devices (well‐beyond 40%) have been demonstrated up to Ka band , a rather limited PAE has been reported so far from Q band (40 GHz) and above . This is because for “standard” AlGaN/GaN HEMTs using barrier thicknesses ranging from 17 to 25 nm, the gate‐length scaling below 0.15 μm is dominated by short channel parasitic effects, such as the reduction of the transconductance due to a poor gate length/gate‐to‐channel distance aspect ratio.…”