W-band SiGe LNA using unilateral gain peaking

Alvarado, Javier; Kornegay, K.T.; Welch, B.; Wang, Yanxin W.

doi:10.1109/mwsym.2008.4633160

Cited by 7 publications

(8 citation statements)

References 5 publications

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“…Fig. 11 presents the measured P -1dB (11)(12) and saturated power (P sat ) (13.5-14 dBm) for the 4-stage LNA. Comparable wideband GaAs HEMTs have typical P -1dB of 0 dBm.…”

Section: W-band Receiver Componentsmentioning

confidence: 99%

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W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology

Margomenos

Kurdoghlian

Micovic

et al. 2014

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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We report the first W-band GaN receiver components using a next generation, highly scaled GaN device technology. This technology (40nm, f T = 220 GHz, f max = 400 GHz, V brk > 40V) enables receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability. This paper includes results for a 4 and a 5 stage low noise amplifier (LNA) (gain over 5 dB/stage at 110 GHz), a single-pole single-throw (SPST) and a single-pole double-throw (SPDT) switch with loss of 0.9 dB and 1.3 dB respectively and a reflective type phase shifter.

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“…Fig. 11 presents the measured P -1dB (11)(12) and saturated power (P sat ) (13.5-14 dBm) for the 4-stage LNA. Comparable wideband GaAs HEMTs have typical P -1dB of 0 dBm.…”

Section: W-band Receiver Componentsmentioning

confidence: 99%

“…The chips size is 3 mm x 1.3 mm. State of the art W-band LNAs offer comparable performance [11,12]. In order to evaluate the linearity of the amplifier we tested it under large signal at 100 GHz.…”

Section: W-band Receiver Componentsmentioning

confidence: 99%

W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology

Margomenos

Kurdoghlian

Micovic

et al. 2014

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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“…W-band (75-110 GHz) amplifiers in SiGe technology have recently been reported in the literature [23]- [25].…”

Section: Linear Amplifi Ersmentioning

confidence: 99%

“…A 91 GHz low-noise amplifier (LNA) using a unilateral gain peaking design technique was presented in [23]. An ultra-wideband amplifier scheme was realized in [26] with two cascaded stages that are equalized for high-bandwidth and low-gain ripple.…”

Section: Linear Amplifi Ersmentioning

confidence: 99%

High speeds in a single chip

et al. 2009

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“…The comprehensive design flow proposed in [5] was utilized in this work, which provides a process in which a designer will make well informed and/or even innovative design choices. As a design progresses through the flow, the circuit becomes a hybrid blend of schematic, layout and custom model blocks.…”

Section: Circuit Designmentioning

confidence: 99%

A 91 GHz receiver front-end in silicon-germanium technology

Kim

Alvarado

Kornegay

2008

2008 IEEE Radio Frequency Integrated Circuits Symposium

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A W-band receiver front-end, including a lownoise amplifier (LNA), a coupled-wire Marchand balun and a double-balanced mixer, has been designed and fabricated in IBM's 8HP 0.12µm, 200GHz-f T SiGe technology. The circuit operates in the 87-94GHz frequency range with a peak conversion gain of 36.3dB and a minimum single sideband (SSB) noise figure of 10dB. At 91GHz the measured 1dB input compression point is -36dBm. The entire circuit occupies 1.82mm 2 including bond pads and dissipates only 109.7mW. To the authors' knowledge this front-end achieves the highest conversion gain among published receiver frontends in silicon-based technology operating beyond 90GHz.Index Terms -W-band, receiver, front-end design, lownoise amplifier (LNA), mixer, SiGe, millimeter-wave, balun

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W-band SiGe LNA using unilateral gain peaking

Cited by 7 publications

References 5 publications

W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology

W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology

High speeds in a single chip

A 91 GHz receiver front-end in silicon-germanium technology

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