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Suh, Seung Wan; Mı̂inea, Liliana A.; Hoffman, David M.; Zhang, Z.; Chu, W. K.

doi:10.1023/a:1006777915520

Cited by 18 publications

(7 citation statements)

References 28 publications

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“…Due to the pyrophoric nature of the compound, alternative precursors such as zinc acetate7a,7e and zinc acetylacetonate [Zn(acac) 2 ]7b have been adopted to avoid the handling problems associated with alkylzinc reagents. There have been attempts to develop other suitable precursors, which include [Zn(hfac) 2 (TMEDA)],8a [Zn(tmp) 2 ],8b [Zn(TTA) 2 TMEDA],8c [(CH 3 )Zn{OC(CH 3 ) 3 }] 4 ,8d [EtZnNEt 2 ],8e etc.). However, the thermal properties such as high vaporization temperatures and high melting points (136–138 °C) are not so favorable.…”

Section: Introductionmentioning

confidence: 99%

Volatile, Monomeric, and Fluorine‐Free Precursors for the Metal Organic Chemical Vapor Deposition of Zinc Oxide

et al. 2010

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Two new bis(ketoiminato)zinc(II) compounds that show excellent precursor properties for the chemical vapor deposition (CVD) of zinc oxide materials are presented. The synthesis of the ketoiminato zinc complexes [Zn{[(CH2)xOCH3]NC(CH3)=C(H)C(CH3)=O}2] (1: x = 2; 2: x = 3) is straightforward and can easily be scaled up. Compounds 1 and 2 were analyzed by 1H and 13C NMR spectroscopy, elemental analysis, single‐crystal X‐ray diffraction analysis, and electron ionization mass spectrometry. The compounds exist as monomers with a distorted tetrahedral zinc center. Thermogravimetric studies, sublimation, and solubility tests reveal very promising properties for metal–organic CVD related applications. Preliminary metal–organic CVD experiments with the use of compound 1 were performed as a screening for the suitability of the new bis(ketoiminato)zinc complexes as precursors for the growth of ZnO thin films in the presence of oxygen. The films were characterized by X‐ray diffraction, scanning electron microscopy, energy dispersive analysis of X‐ray, and Rutherford backscattering measurements. The as‐deposited ZnO films were stoichiometric; the crystalline films exhibited strong preferred orientation along the c‐axis.

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Section: Introductionmentioning

confidence: 99%

Volatile, Monomeric, and Fluorine‐Free Precursors for the Metal Organic Chemical Vapor Deposition of Zinc Oxide

et al. 2010

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“…These complexes have also been used as catalysts for Lewis acid catalysed transformations, for example the Aldol reaction and ring opening polymerisations [1,2]. Zinc amides have also been used as molecular precursors for inorganic materials synthesis, either through CVD or by controlled hydrolysis to generate zinc oxide nanomaterials [3,4].…”

Section: Introductionmentioning

confidence: 99%

An amido lithium tetra-zinc oxo complex: Synthesis and X-ray crystal structure of (μ4-oxo)-pentakis(μ2-diethylamido)-bis(N(ethyl)CHCH2)-lithium-tetrazinc

Williams¹,

White²

2007

Journal of Organometallic Chemistry

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“…Plasma‐enhanced chemical vapour deposition is utilised only on a limited scale 10–16. Zinc oxide can be deposited by chemical vapour deposition from zinc acetate,17 zinc acetylacetonate,18 dialkyl zinc,6,7 or zinc amide 19. A commonly used organometallic zinc precursor is diethylzinc.…”

Section: Introductionmentioning

confidence: 99%

Plasma Processes and Film Growth of Expanding Thermal Plasma Deposited Textured Zinc Oxide

Groenen

Linden²,

Sanden

2005

Plasma Processes & Polymers

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Summary: Plasma processes and film growth of textured zinc oxide deposited from oxygen and diethyl zinc utilizing expanding thermal argon plasma created by a cascaded arc is discussed. In all conditions explored, an excess of argon ions and low temperature electrons is available, which represent the chemistry taking place. The plasma induced decomposition mechanism involves charge exchange with argon ions, and consecutive dissociative recombination with electrons emanating from the cascaded arc plasma source. The presence of reactive atomic species, specifically Zn* and O*, is confirmed with the help of optical emission spectroscopic measurements. The absence of residual carbon in the films suggests a mechanism involving the dissociation of the ZnC bonds in the plasma instead of at the surface. Film growth appears to proceed by the adsorption of particular zinc species, followed by subsequent reaction with oxygen, with the deposition rate being directly proportional to the arrival rate of the particular reactive species. It is suggested that atomic zinc adsorbs on the surface in a weakly bounded highly mobile state. Best intrinsic transparent conducting oxide quality, that is film conductivity, is obtained at the highest deposition rate.

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Untitled

Cited by 18 publications

References 28 publications

Volatile, Monomeric, and Fluorine‐Free Precursors for the Metal Organic Chemical Vapor Deposition of Zinc Oxide

Volatile, Monomeric, and Fluorine‐Free Precursors for the Metal Organic Chemical Vapor Deposition of Zinc Oxide

An amido lithium tetra-zinc oxo complex: Synthesis and X-ray crystal structure of (μ4-oxo)-pentakis(μ2-diethylamido)-bis(N(ethyl)CHCH2)-lithium-tetrazinc

Plasma Processes and Film Growth of Expanding Thermal Plasma Deposited Textured Zinc Oxide

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