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Legin, Andrey; Baidakov, D. L.; Ozernoi, M. I.; Vlasov, Yu. G.; Школьников, Е. В.

doi:10.1023/a:1015373429800

Cited by 5 publications

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“…Apart from the PVD and doping techniques, attempts utilizing chemical deposition methods have been performed in order to realize chalcogenide glass-based thin-film sensors: Legin and co-workers could demonstrate the fabrication of copper-and lead-containing glasses [40]. In these experiments, chalcogenide glass materials based on CuI-PbI 2 -As 2 Se 3 , CuI-As 2 Se 3 and PbI 2 -As 2 Se 3 were deposited from an organic solvent and analyzed to verify the electric conduction parameters.…”

Section: Thin-film Fabrication and Doping Methods Of Chalcogenide Glamentioning

confidence: 99%

About 20 Years of Silicon‐Based Thin‐Film Sensors with Chalcogenide Glass Materials for Heavy Metal Analysis: Technological Aspects of Fabrication and Miniaturization

Schöning

Kloock

2007

Electroanalysis

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Chalcogenide glass materials as membranes for potentiometric sensors for chemical analysis in solutions, e.g., ionselective electrodes, have been studied for more than three decades. Already in the 1970s, first papers dealt with the ion-sensing properties of chalcogenide glasses, followed by systematic investigations of their solid-state chemistry, the sensing mechanism and their analytical characteristics. Combining the analytical performance of chalcogenide glass membranes with techniques originally invented for semiconductor processing, a new generation of silicon-based thinfilm sensors with chalcogenide glass materials for heavy metal detection has been created. In the beginning, co-sputtering of Cu and As 2 Se 3 resulted in a Cu 2þ -selective field-effect sensor, while in recent years, a variety of chalcogenide glass materials have been stoichiometrically deposited onto ISFETs (ion-sensitive field-effect transistor), EIS (electrolyte-insulator-semiconductor), LAPS (light-addressable potentiometric sensor) and mISE structures, respectively, serving as miniaturized chemical sensors. The present review paper is devoted to research and development in the field of silicon-based thin-film sensors with chalcogenide glass materials and emphasizes technological aspects of fabrication and miniaturization within the last 20 years.

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Section: Thin-film Fabrication and Doping Methods Of Chalcogenide Glamentioning

confidence: 99%

About 20 Years of Silicon‐Based Thin‐Film Sensors with Chalcogenide Glass Materials for Heavy Metal Analysis: Technological Aspects of Fabrication and Miniaturization

Schöning

Kloock

2007

Electroanalysis

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X-Ray fluorescence analysis of Ge–As–Se glasses using X-Ray and electron-beam excitation

et al. 2015

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The quantitative content of germanium, arsenic, and selenium in As 1 -x Se x , Ge 1 -x Se x , and Ge 1 -x -y As y Se x (As y (Ge 1 -z Se z ) 1 -y ) glassy alloys has been determined by X ray fluorescence analysis with fluorescence excitation by bremsstrahlung X rays and an electron beam. The use of these techniques has made it possible to determine the quantitative composition of the glasses (x, y, and z) with an accuracy of ±0.0002 in a surface layer 0.1 mm (under X ray excitation) to 0.1 µm (under electron beam excitation) in thickness.

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Composition determination of multicomponent chalcogenide glassy semiconductors with X-ray fluorescence analysis

et al. 2013

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The standard method-recording of X ray fluorescence spectra of a standard Ge 0.2 As 0.4 Se 0.4 alloy followed by evaluation of its component spectral fractions and by building of dependences x XRF = f(x) and y XRF = f(y) for the As x (Ge y Se 1 -y ) 1 -x system-was employed to determine the quantitative contents of arsenic, germanium, and selenium in the Ge t As s Se 1 -t -s glassy alloys with X ray fluorescence analysis. The accuracy of the composition's determination was ±0.0005 for both x and y. However, it was not possible to use the external standard method for determining the tellurium in As y Se 1 -y ) 1 -x Te x alloys because tellurium, arsenic, and selenium had significantly different X ray fluorescence characteristics and, hence, substitution of the arsenic or selenium for tellurium at a fixed y resulted in tellurium emission fraction changing.

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Cited by 5 publications

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About 20 Years of Silicon‐Based Thin‐Film Sensors with Chalcogenide Glass Materials for Heavy Metal Analysis: Technological Aspects of Fabrication and Miniaturization

About 20 Years of Silicon‐Based Thin‐Film Sensors with Chalcogenide Glass Materials for Heavy Metal Analysis: Technological Aspects of Fabrication and Miniaturization

X-Ray fluorescence analysis of Ge–As–Se glasses using X-Ray and electron-beam excitation

Composition determination of multicomponent chalcogenide glassy semiconductors with X-ray fluorescence analysis

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