Wafer-level chip scale MEMS oscillator for wireless applications

Kuypers, Jan H.; Zolfagharkhani, G.; Gaidarzhy, A.; Thalmayr, Florian; Sparks, Andrew W.; Chen, D. M.; Rebel, R.; Newman, B. A.; Asmani, M.; Badillo, D.A.; Schoepf, K. J.

doi:10.1109/fcs.2012.6243689

Cited by 7 publications

(7 citation statements)

References 12 publications

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“…The data are grouped in capacitive and piezoelectric - oscillators. Furthermore, several quartz oscillator [118,163] and LC-based oscillators [164][165][166][167] are included for comparison. The most important parameters are depicted in tables 5 and 6.…”

Section: Noise Comparisonmentioning

confidence: 99%

“…In [200], a stability of 20 ppm is obtained over a large temperature window of 100 K using a 1.5 GHz AlN-SiO 2 FBAR resonator in combination with temperature-dependent impedance loading. In [163,209], a frequency synthesizer technique is demonstrated in combination with frequency tuning of the resonator resulting in a very good frequency stability of only 2 ppm over a wide temperature range of 130 K.…”

Section: Resonator Stability Temperature Drift and Agingmentioning

confidence: 99%

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A review of MEMS oscillators for frequency reference and timing applications

Beek¹,

Puers²

2011

J. Micromech. Microeng.

390

219

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MEMS-based oscillators are an emerging class of highly miniaturized, batch manufacturable timing devices that can rival the electrical performance of well-established quartz-based oscillators. In this review, a description is given of the key properties of a MEMS resonator that determine the overall performance of a MEMS oscillator. Piezoelectric, capacitive and active resonator transduction methods are compared and their impact on oscillator noise and power dissipation is explained. An overview is given of the performance of MEMS resonators and MEMS-based oscillators that have been demonstrated to date. Mechanisms that affect the frequency stability of the resonator, such as temperature-induced frequency drift, are explained and an overview is given of methods that have been demonstrated to improve the frequency stability. The aforementioned performance indicators of MEMS-based oscillators are benchmarked against established quartz and CMOS technologies.

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Section: Noise Comparisonmentioning

confidence: 99%

Section: Resonator Stability Temperature Drift and Agingmentioning

confidence: 99%

A review of MEMS oscillators for frequency reference and timing applications

Beek¹,

Puers²

2011

J. Micromech. Microeng.

390

219

View full text Add to dashboard Cite

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“…As high-performance portable electronic systems are becoming vastly popular, the development of power sources and sensors together with microelectromechanical (MEM) components and other active electronics on the same silicon wafer seems to be very promising for use in portable electronic devices. − Titanium dioxide (TiO 2 ) is one of the most researched functional semiconductor materials and finds versatile applications in sensors, optoelectronics, dye-sensitized solar cells, photocatalysis, biomedicine, and electrochemical and storage devices such as batteries. − More recently, self-assembled one-dimensional (1D) vertically oriented TiO 2 nanotube arrays grown on different substrates have been shown to be an attractive component of such devices because of their enhanced structural properties at the nanoscale. − Of the many routes that have been used to prepare 1D arrays of metal–oxide nanotubes, including template and hydrothermal synthesis and electrochemical lithography, the electrochemical anodization process is the most promising technique with the potential for automation relative to many other methods. − …”

Section: Introductionmentioning

confidence: 99%

Synthesis and Growth Mechanism of Thin-Film TiO₂ Nanotube Arrays on Focused-Ion-Beam Micropatterned 3D Isolated Regions of Titanium on Silicon

Hamedani

Lee

Al-Sammarraie

et al. 2013

ACS Appl. Mater. Interfaces

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In this paper, the fabrication and growth mechanism of net-shaped micropatterned self-organized thin-film TiO2 nanotube (TFTN) arrays on a silicon substrate are reported. Electrochemical anodization is used to grow the nanotubes from thin-film titanium sputtered on a silicon substrate with an average diameter of ~30 nm and a length of ~1.5 μm using aqueous and organic-based types of electrolytes. The fabrication and growth mechanism of TFTN arrays from micropatterned three-dimensional isolated islands of sputtered titanium on a silicon substrate is demonstrated for the first time using focused-ion-beam (FIB) technique. This work demonstrates the use of the FIB technique as a simple, high-resolution, and maskless method for high-aspect-ratio etching for the creation of isolated islands and shows great promise toward the use of the proposed approach for the development of metal oxide nanostructured devices and their integration with micro- and nanosystems within silicon-based integrated-circuit devices.

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“…SOI wafers with pre-etched cavities enable MEMS design to be more flexible and they provide better process control and better performance in many cases [16]. A high-performance temperature compensated MEMS oscillator (TCMO TM ) with the aid of cavity SOI has been demonstrated in [17]. Whereas the main sections in [17] are concentrated on employing an analog temperature compensation technique to improve the temperature stability of the devices.…”

Section: Introductionmentioning

confidence: 99%

A high-performance bulk mode single crystal silicon microresonator based on a cavity-SOI wafer

Xiong

et al. 2012

J. Micromech. Microeng.

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A cavity-silicon-on-insulator (SOI)-based single crystal silicon (SCS) micromechanical resonator has been demonstrated in this paper. The most distinguishing feature of this method is that it solves the restrictions of being released from the sacrificial layer. The resonator structures can be fabricated and released in one step using dry anisotropic etching. The differential drive, single-ended sense configuration is implemented to measure the electrical characterization of the fabricated resonator. The fabricated square plate resonator has been excited in the Lame´ mode at a resonant frequency of 4.126 MHz and exhibits a quality factor (Q) as high as 5.49× 106 at a pressure of 0.05 mbar. This result corresponds to a frequency–Q product of 2.27× 1013, which is the highest value demonstrated to date for silicon-based resonators as far as we know. The dependence of Q and resonant frequency on the operating pressure is measured and characterized. The temperature stability of the device is also demonstrated, with the temperature coefficient of resonant frequency less than −20.8 ppm °C−1 in the temperature range from −10 to 60 °C. The high performance of the resonator not only benefits from the superior performance of SCS as a mechanical material, but also the merit of the cavity-SOI structure.

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Wafer-level chip scale MEMS oscillator for wireless applications

Cited by 7 publications

References 12 publications

A review of MEMS oscillators for frequency reference and timing applications

A review of MEMS oscillators for frequency reference and timing applications

Synthesis and Growth Mechanism of Thin-Film TiO₂ Nanotube Arrays on Focused-Ion-Beam Micropatterned 3D Isolated Regions of Titanium on Silicon

A high-performance bulk mode single crystal silicon microresonator based on a cavity-SOI wafer

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Wafer-level chip scale MEMS oscillator for wireless applications

Cited by 7 publications

References 12 publications

A review of MEMS oscillators for frequency reference and timing applications

A review of MEMS oscillators for frequency reference and timing applications

Synthesis and Growth Mechanism of Thin-Film TiO2 Nanotube Arrays on Focused-Ion-Beam Micropatterned 3D Isolated Regions of Titanium on Silicon

A high-performance bulk mode single crystal silicon microresonator based on a cavity-SOI wafer

Contact Info

Product

Resources

About

Synthesis and Growth Mechanism of Thin-Film TiO₂ Nanotube Arrays on Focused-Ion-Beam Micropatterned 3D Isolated Regions of Titanium on Silicon