2007
DOI: 10.1007/s00542-007-0437-7
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Wafer-level plasma activated bonding: new technology for MEMS fabrication

Abstract: Manufacturing and integration of MEMS devices by wafer bonding often lead to problems generated by thermal properties of materials. These include alignment shifts, substrate warping and thin film stress. By limiting the thermal processing temperatures, thermal expansion differences between materials can be minimized in order to achieve stress-free, aligned substrates without warpage. Achieving wafer level bonding at low temperature employs a little magic and requires new technology development. The cornerstone… Show more

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Cited by 39 publications
(33 citation statements)
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“…Several bonding techniques are available and we highlight eutectic and direct bonding as the most suitable methods due to their low outgassing and high hermeticity, with anodic bonding as a suitable alternative if the oxygen released during bonding can be pumped away. Lowering the temperatures of these bonding techniques should be investigated as they can reduce the outgassing limitations by two or three orders of magnitude 171,174,175,181,[243][244][245][246][247][248] .…”
Section: E Vacuum Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Several bonding techniques are available and we highlight eutectic and direct bonding as the most suitable methods due to their low outgassing and high hermeticity, with anodic bonding as a suitable alternative if the oxygen released during bonding can be pumped away. Lowering the temperatures of these bonding techniques should be investigated as they can reduce the outgassing limitations by two or three orders of magnitude 171,174,175,181,[243][244][245][246][247][248] .…”
Section: E Vacuum Discussionmentioning
confidence: 99%
“…Moreover, thin films, such as gold on silicon, can diffuse at moderate temperatures if additional barrier layers are not used 170 . In these situations one must use lower temperature degassing, such as UV desorption or plasma cleaning, and also develop lower temperature bonding methods 171,174,175,181,[243][244][245][246][247][248] .…”
Section: Discussionmentioning
confidence: 99%
“…Conventional approaches, such as wire bonding and lead frame assembly, require large footprint of device because of the long wires and housing lids, which introduce extra cost. Wafer bonding is an improved technology that meets requirements of downscaling, increasing integration density and lowering fabrication cost [61]. Schematic of an optical sensing microsystem using a Si-based platform.…”
Section: Wafer Bonding For Electrical and Optical Interfacesmentioning
confidence: 99%
“…In order to obtain high performance electrical and optical interfaces, low-temperature wafer bonding is recommended. Thermal treatment at low temperatures minimizes the CTE difference induced alignment offset and stress between materials, thus increasing the optical coupling efficiency and the reliability of the interconnections [61].…”
Section: Low-temperature Wafer Bonding Technologiesmentioning
confidence: 99%
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