Wafer-level pulsed-DC electromigration response at very high frequencies

Pierce, D.G.; Snyder, E.S.; Swanson, Scot E.; Irwin, Lloyd W.

doi:10.1109/relphy.1994.307836

Cited by 11 publications

(4 citation statements)

References 22 publications

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“…On the contrary, the frequency value above which the average model holds true is comparatively independent of the strength of the applied stress because of the attainment of a stable temperature within the metal line. The frequency of greater than 10 MHz obtained in this study is in the same range as that reported elsewhere [9], [10]. The variance of the value with current stress and operating frequency can be shown by a numerical example based on our calculation.…”

Section: Diffusion-drift Model: Vacancy Supersaturation Behaviorsupporting

confidence: 87%

“…It is thus clear that the or dependence is observable experimentally and that the concrete value of depends strongly upon the temperature difference, which in turn varies with current density, test (oven) temperature as well as sample structure. This could be one reason why the reported transition region of frequency between the average and on-time models is far from consistent [6], [7], [9], [12]. On the contrary, the frequency value above which the average model holds true is comparatively independent of the strength of the applied stress because of the attainment of a stable temperature within the metal line.…”

Section: Diffusion-drift Model: Vacancy Supersaturation Behaviormentioning

confidence: 96%

“…A recent theoretical investigation [11] has even shown that the MTF is proportional to for an arbitrary periodic stress (unidirectional but not necessarily to be rectangularly-0018-9383/98$10.00 © 1998 IEEE pulsed). On the other hand, several experimental studies [6], [7], [9], [10] supported an or dependence if the pulse repetition frequency is below a certain value. This can be qualitatively explained by nonlinear thermal effects.…”

Section: Simulation Of Temperature Cycling Effects On Electromigratiomentioning

confidence: 99%

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Simulation of temperature cycling effects on electromigration behavior under pulsed current stress [VLSI metallization]

Gui

Haslett

Dew

et al. 1998

IEEE Trans. Electron Devices

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The temperature cycling effect on electromigration behavior under pulsed current conditions for metallization used in very large scale integrated (VLSI) devices is numerically investigated. This involves the solution of a two-dimensional (2-D) heat-conduction equation and a one-dimensional (1-D) diffusiondrift equation. We find that the characteristic thermal response time for establishing the equilibrium, for a typical VLSI metallization structure, is slightly longer than 1 ms. As a result, the steady-state temperature difference in the metal line between the upper and lower values in response to the pulsed current operation is maximized when the frequency is below 250 Hz with a duty factor of 0.5. The temperature difference decreases with increasing frequency. At frequencies above 10 MHz, the thermal capacity of the metal line inhibits appreciable temperature fluctuation. For a constant line temperature the time-dependent vacancy buildup has been shown to be proportional to r m with m = 2 (where r is the duty factor), consistent with the "average model" for predicting the failure time. In this study, we confirm the speculation that Joule heating due to an elevated current density employed in accelerated life testing can bring about an m<2 dependence at low frequencies. The confirmation is based upon the solution of the electromigration initial and boundary value problem by taking into account the temperature dependence of several relevant physical parameters, particularly the vacancy diffusivity.

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Section: Diffusion-drift Model: Vacancy Supersaturation Behaviorsupporting

confidence: 87%

Section: Diffusion-drift Model: Vacancy Supersaturation Behaviormentioning

confidence: 96%

Section: Simulation Of Temperature Cycling Effects On Electromigratiomentioning

confidence: 99%

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Simulation of temperature cycling effects on electromigration behavior under pulsed current stress [VLSI metallization]

Gui

Haslett

Dew

et al. 1998

IEEE Trans. Electron Devices

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“…Clock and signal nets, on the other hand, conduct alternating currents (AC). Due to self-healing mechanisms, these alternating currents affect wire lifetimes less than direct currents [29] [32]. Thus, the different net classes of digital circuits require different current density limits.…”

Section: Digital Designmentioning

confidence: 99%