Wafer-mapping of hot carrier lifetime due to physical stress effects (MOSFET)

MacWilliams, K.P.; Lowry, Lynn E.; Swanson, D.J.; Scarpulla, J.

doi:10.1109/vlsit.1992.200668

Cited by 2 publications

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“…It has long been thought that arelationship exists between the electrical performance and physical properties of MOS devices. Many workers have studied mechanical stresses in MOS structures and the relationship to radiation damage [1][2][3][4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Observation of radiation induced changes in stress and electrical properties in MOS devices

Shaw

Lowry

MacWilliams

et al. 1992

IEEE Trans. Nucl. Sci.

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Strain measurements using x-ray diffraction were performed on irradiated commercial and radiation hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and Vot and Vi, were separated using the subthreshold slope method for all devices. A correlation has been shown to exist between physical strain relaxation and the electrical properties as a function of radiation dose and recovery. Data shown suggest that the physical response (strain relaxation) in the silicon at the oxide interface is a measure of the type of damage induced and the recovery mechanism. Post radiation measurements of AVit and AVot taken immediately after irradiation support the conclusions of Zekeriya and Ma and Kasama, et al.; compressive stress at the silicon/SiO, interface does reduce radiation damage in the device. "

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