2021
DOI: 10.1016/j.infrared.2020.103554
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Watt-level passively Q-switched Tm:YVO4 laser with few-layer WSe2 saturable absorber

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Cited by 11 publications
(3 citation statements)
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“…However, to our knowledge, laser emission on the 3 H 4 → 3 H 5 transition in Tm-doped vanadate crystals has not been reported. So far, studies on Tm-doped vanadate (e.g., Tm:YVO 4 [25][26][27][28] , Tm:GdVO 4 [27][28][29] , and Tm:LuVO 4 [27,28] ) lasers have mainly focused on the 3 F 4 → 3 H 6 transition around 1.9 μm. Among the vanadate crystals, the Tm:YVO 4 crystal with natural birefringence is an excellent laser gain medium for 1.9 μm laser due to its large absorption and emission cross sections.…”
Section: Introductionmentioning
confidence: 99%
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“…However, to our knowledge, laser emission on the 3 H 4 → 3 H 5 transition in Tm-doped vanadate crystals has not been reported. So far, studies on Tm-doped vanadate (e.g., Tm:YVO 4 [25][26][27][28] , Tm:GdVO 4 [27][28][29] , and Tm:LuVO 4 [27,28] ) lasers have mainly focused on the 3 F 4 → 3 H 6 transition around 1.9 μm. Among the vanadate crystals, the Tm:YVO 4 crystal with natural birefringence is an excellent laser gain medium for 1.9 μm laser due to its large absorption and emission cross sections.…”
Section: Introductionmentioning
confidence: 99%
“…Saito et al demonstrated a roomtemperature 5% Tm:YVO 4 laser obtaining an output power of 48 mW at 1.94 μm with a slope efficiency of 25% [26] . Hu et al reported a 3% Tm:YVO 4 laser producing a maximum CW output power of 2.59 W at 1923.1 nm with a slope efficiency of 41.7% [25] .…”
Section: Introductionmentioning
confidence: 99%
“…The atoms inside the facets are bonded together by strong chemical bonds, and the layers outside the facets interact with each other due to weak VDW forces, allowing them not only to stack on top of each other, but also to exfoliate them into thin nanosheets, so as to be used in the fabrication of an extensive range of high-performance optoelectronic devices [33][34][35] . As a typical representative of TMDs, Tungsten diselenide (WSe 2 ) has a low thermal conductivity, a higher nonlinear two-photon absorption coefficient (1.9×10 -9 cm/W), and a tunable bandgap that varies with the number of layers (1.2 eV indirect bandgap for bulk materials and 1.65 eV direct bandgap for single-layer structures), thus the response wavelengths can be extended to the mid-infrared spectral region [36][37][38] . Shows potential for use in Q-switched and mode-locked lasers.…”
Section: Introductionmentioning
confidence: 99%