Wave functions and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>g</mml:mi></mml:math>factor of holes in Ge/Si quantum dots

Nenashev, A. V.; Двуреченский, А. В.; Zinovieva, A. F.

doi:10.1103/physrevb.67.205301

Cited by 60 publications

(53 citation statements)

References 33 publications

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“…Moreover, similarly to bulk semiconductors and quantum wells, 52,54-56 the magnetic field induced mixing of heavy and light hole states and quantum confinement strongly renormalizes heavy-hole g-factor in quantum dots from its value in the bulk. [57][58][59][60][61][62][63] Indeed, in the presence of the magnetic field the wavevector k in Eq. (4) is replaced by k + eA(r)/c , where A(r) = (1/2)B × r is the vector potential of the magnetic field.…”

Section: Longitudinal G-factor G H1mentioning

confidence: 99%

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

Durnev¹,

Glazov²,

Ivchenko³

et al. 2013

Phys. Rev. B

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We present a microscopic theory of the magnetic field induced mixing of heavy-hole states ±3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots.

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Section: Longitudinal G-factor G H1mentioning

confidence: 99%

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

Durnev¹,

Glazov²,

Ivchenko³

et al. 2013

Phys. Rev. B

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“…This modified magnetic moment also controls the spin dynamics in nanostructures, and is usually parametrized in the literature as a shape, size and composition dependent g tensor defined by μ ¼ g · S, where S represents the electron spin [3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Despite the central nature of g tensors to high-speed spin manipulation [12][13][14][15]17,18], spin lifetimes [19,20], and quantum computation [21], the spatial structure of the spin-correlated orbital currents that determine these g tensors has not been investigated.…”

mentioning

confidence: 99%

Spin-Orbit-Induced Circulating Currents in a Semiconductor Nanostructure

et al. 2014

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Circulating orbital currents produced by the spin-orbit interaction for a single electron spin in a quantum dot are explicitly evaluated at zero magnetic field, along with their effect on the total magnetic moment (spin and orbital) of the electron spin. The currents are dominated by coherent superpositions of the conduction and valence envelope functions of the electronic state, are smoothly varying within the quantum dot, and are peaked roughly halfway between the dot center and edge. Thus the spatial structure of the spin contribution to the magnetic moment (which is peaked at the dot center) differs greatly from the spatial structure of the orbital contribution. Even when the spin and orbital magnetic moments cancel (for g = 0) the spin can interact strongly with local magnetic fields, e.g. from other spins, which has implications for spin lifetimes and spin manipulation.

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“…13,14 In general, the effective mass approximation (EMA) type calculation is inadequate for nanostructures at small sizes ( ≤ 30Å ) because the atomic nature and surface effects become more prominent as the size of the nanostructure decreases. Because of its atomic nature, the tight-binding model is ideal to study the electronic and optical properties of nanostructures in this size range.…”

Section: Introductionmentioning

confidence: 99%

Magneto-optical response of CdSe nanostructures

Chen

Whaley

2004

Phys. Rev. B

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We present theoretical calculations of the Landé g-factors of semiconductor nanostructures using a time-dependent empirical tight-binding method. The eigenenergies and eigenfunctions of the band edge states are calculated as a function of an external magnetic field with the electromagnetic field incorporated into the tight-binding Hamiltonian in a gauge-invariant form. The spin-orbit interaction and magnetic field are treated non-perturbatively. The g-factors are extracted from the energy splitting of the eigenstates induced by the applied magnetic field. Both electron and hole gfactors are investigated for CdSe nanostructures. The size and aspect ratio dependence of g-factors is studied. We observe that the electron g-factors are anisotropic and find that the calculated values agree quantitatively with experimental data. We conclude that the two distinct g-factor values extracted from time resolved Faraday rotation experiments should be assigned to the anisotropic in plane (g ) and out of plane (gz) electron g-factors, rather than to isotropic electron and exciton g-factors. We find that the anisotropy in the electron g-factor depends on the aspect ratio of the nanocrystal. The g-factor anisotropy derived from the wurtzite structure and from the non-unity aspect ratio may cancel each other in some regime. We observe that hole g-factors oscillate as a function of size, due to size dependent mixing between the heavy hole-light hole components of the valence band edge states. Extension to the calculation of exciton g-factors is discussed.

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Wave functions andgfactor of holes in Ge/Si quantum dots

Cited by 60 publications

References 33 publications

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

Spin-Orbit-Induced Circulating Currents in a Semiconductor Nanostructure

Magneto-optical response of CdSe nanostructures

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