Waveform analysis of carbon nanotube interconnects connected to various driver/load circuits

Sathyakam, P. Uma; Banerjee, Ananyo; Mallick, P. S.

doi:10.1080/00207217.2020.1870741

Cited by 3 publications

(1 citation statement)

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“…Many works in literature discusses the models of CNT based interconnects. [20][21][22][23] Basically, a bundle of CNTs are used to mitigate the problem of high resistivity of a single CNT, which is around 6.45 kΩ μm −1 . Figure 1 shows the CNT bundle geometry used in this work.…”

Section: Interconnect Circuit Modelsmentioning

confidence: 99%

Performance Analysis of CNT Bundle Interconnects in Various Low-k Dielectric Media

Shefali¹,

Fatima²,

Sathyakam³

2022

ECS J. Solid State Sci. Technol.

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The capacitance of the interconnect, which contributes to RC delay, power, and crosstalk, is increasingly limiting the performance of ULSI chips as IC technology advances. Different dielectric materials are employed as electrical shielding between interconnects (also called as inter-wire dielectrics) to minimise the coupling capacitance of closely spaced interconnects, and they are compared in terms of their performance. For SWCNT and MWCNT interconnects at various global interconnect lengths for 20 nm and 14 nm technology nodes, performance parameters such as crosstalk delay, power dissipation, power crosstalk delay product (PCDP) and crosstalk noise are calculated and compared. It is observed that, upon using different dielectric materials in CNT bundle interconnect, MWCNT bundle interconnects is performing better compared to SWCNT bundle interconnects at 20 nm and 14 nm technology nodes for all global interconnect lengths.

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Section: Interconnect Circuit Modelsmentioning

confidence: 99%