Waveguide-integrated telecom-wavelength photodiode in deposited silicon

Preston, Kyle; Lee, Yoon Ho Daniel; Zhang, Mian; Lipson, Michal

doi:10.1364/ol.36.000052

Cited by 57 publications

(45 citation statements)

References 15 publications

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“…Sub-band gap detection by means of deliberately created defects from silicon implantation [14] or relying on surface states [15] presents a solution. Another option is again introducing a material with the desired properties as done with germanium [16] or using polycrystalline silicon [17]. An organic material for high-speed detection at IR wavelengths remains to be found.…”

Section: Detectorsmentioning

confidence: 99%

Silicon-organic hybrid fabrication platform for integrated circuits

Korn

Alloatti

Lauermann

et al. 2012

2012 14th International Conference on Transparent Optical Networks (ICTON)

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The combination of CMOS compatible Silicon-On-Insulator (SOI) fabrication technology with organic cover materials constitutes the Silicon-Organic Hybrid (SOH) fabrication platform, which shows innovative functionality for the making of integrated optical circuits. We report on experimental demonstrations of essential building blocks for transceivers, while relying only on well-known SOI processing steps and simple post processing of the organic materials. Keywords: Silicon-organic hybrid, silicon-on-insulator, photonic integrated circuits, modulators, electro-optic devices. INTRODUCTIONSilicon-Organic Hybrid (SOH) technology [1] offers new active optical waveguides and integrated optoelectronic circuits to address rising demands on energy consumption, speed and ease of fabrication for applications in communication. Any functionality not available from pure silicon waveguides is created from the combination of Silicon-On-Insulator (SOI) structures and organic cladding materials, which are chosen according to their often unique properties. There is a competition between photonic integrated circuit (PIC) platforms based on material systems such as III-V semiconductors, III-V components on silicon, germanium on silicon, lithium niobate, silicon nitride and more. The choice of the platform depends on the specific application and target parameters, but a detailed analysis is beyond the scope of this paper. Here we assume a desire to use SOI technology, because of highest practical integration density, existing infrastructure (scalability, potential high volume, low unit costs) and the potential for future integration with electronics. The choice is also influenced by the range of available devices, i.e. available building blocks to make complete integrated circuits.In this paper we present the SOH platform as a solution to provide signal processing with high-speed SOH electro-optic phase modulators and SOH low voltage phase shifters for tuning passive structures such as filters (e.g. delay interferometers). Also an SOH technology-compatible detector option is discussed, which is based on sub-bandgap or surface state absorption in silicon. We elaborate the SOH concept by showing experimental results for each device, listing particular advantages and discuss challenges ahead of the road.

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Section: Detectorsmentioning

confidence: 99%

Silicon-organic hybrid fabrication platform for integrated circuits

Korn

Alloatti

Lauermann

et al. 2012

2012 14th International Conference on Transparent Optical Networks (ICTON)

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“…The effective free-carrier recombination time has been demonstrated to be τ Carrier ≈ 100 ps [Preston et al 2009], or approximately four times faster than comparable devices in crystalline silicon. Additionally, it has been shown the polycrystalline silicon can be used as a moderately absorbing material for photodetectors [Preston et al 2011].…”

Section: Materials For Silicon Photonicsmentioning

confidence: 99%

“…Recent efforts have enhanced linear absorption by implanting ions to create defects [Bradley et al 2005], obtaining bandwidths exceeding 35GHz and responsivities as high as 10A/W in different devices [Geis et al 2009]. Similarly, deposited polycrystalline silicon can be used as the absorbing material in a microring resonator geometry to enhance absorption and reduce the footprint, demonstrating responsivities as high as 0.15A/W [Preston et al 2011]. Due to the moderate optical absorption, the absorbing polycrystalline silicon material can serve as both the demultiplexing filter and the photodetector.…”

Section: Switchesmentioning

confidence: 99%

Photonic network-on-chip architectures using multilayer deposited silicon materials for high-performance chip multiprocessors

Biberman

Preston

Hendry

et al. 2011

J. Emerg. Technol. Comput. Syst.

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Integrated photonics has been slated as a revolutionary technology with the potential to mitigate the many challenges associated with on-and off-chip electrical interconnection networks. To date, all proposed chipscale photonic interconnects have been based on the crystalline silicon platform for CMOS-compatible fabrication. However, maintaining CMOS compatibility does not preclude the use of other CMOS-compatible silicon materials such as silicon nitride and polycrystalline silicon. In this work, we investigate utilizing devices based on these deposited materials to design photonic networks with multiple layers of photonic devices. We apply rigorous device optimization and insertion loss analysis on various network architectures, demonstrating that multilayer photonic networks can exhibit dramatically lower total insertion loss, enabling unprecedented bandwidth scalability. We show that significant improvements in waveguide propagation and waveguide crossing insertion losses resulting from using these materials enables the realization of topologies that were previously not feasible using only the single-layer crystalline silicon approaches.

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“…The high-speed performance of waveguide integrated detectors has been previously investigated by Geis et al,5 where the potential of this technology was demonstrated for use as a high-speed receiver diode. Silicon defect detectors have recently been incorporated into ring resonator structures based on ion-implanted silicon, 6,7 deposited silicon 8 and surface state defects. 9 The resonator geometry provides a compact device footprint, wavelength selectivity, and increased responsivity due to the buildup of optical intensity within the cavity.…”

Section: Introductionmentioning

confidence: 99%

Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth

et al. 2011

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Abstract.We have devised and fabricated high-speed silicon-on-insulator resonant microring photodiodes. The detectors comprise a p-i-n junction across a silicon rib waveguide microring resonator. Light absorption at 1550 nm is enhanced by implanting the diode intrinsic region with boron ions at 350 keV with a dosage of 1 × 10 13 cm −2 . We have measured 3-dB bandwidths of 2.4 and 3.5 GHz at 5 and 15 V reverse bias, respectively, and observed an open-eye diagram at 5 gigabit/s with 5 V bias. C 2011 Society of Photo-Optical Instrumentation Engineers (SPIE).

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Waveguide-integrated telecom-wavelength photodiode in deposited silicon

Cited by 57 publications

References 15 publications

Silicon-organic hybrid fabrication platform for integrated circuits

Silicon-organic hybrid fabrication platform for integrated circuits

Photonic network-on-chip architectures using multilayer deposited silicon materials for high-performance chip multiprocessors

Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth

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