Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal

Sritirawisarn, N Nut; Otten, van Fwm Frank; Eijkemans, TJ Tom; Nötzel, R.

doi:10.1063/1.2993178

Cited by 4 publications

(3 citation statements)

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“…The linear InAs QD arrays on the optimized SL template are stacked in growth direction with a 16-nm Q1.25 separation layer [20]. Beneath the first layer of QD arrays, a 0.6-ML GaAs interlayer is inserted.…”

Section: Stacked Linear Inas/inp (100) Qd Arraysmentioning

confidence: 99%

“…Single-layer and stacked linear InAs QD arrays are formed by self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP (100) by chemical beam epitaxy (CBE) [19], [20]. The concept of self-organized anisotropic strain engineering for QD ordering has been previously introduced by us in the InAs/GaAs materials system [21]- [24] and is now transferred to the InAs/InP materials system to extend the QD emission wavelength into the important 1.55-m telecom wavelength region.…”

Section: Introductionmentioning

confidence: 99%

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Quantum Dots for Future Nanophotonic Devices: Lateral Ordering, Position, and Number Control

Nötzel

2010

IEEE Photonics J.

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Section: Stacked Linear Inas/inp (100) Qd Arraysmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Quantum Dots for Future Nanophotonic Devices: Lateral Ordering, Position, and Number Control

Nötzel

2010

IEEE Photonics J.

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“…Recently we have introduced self-organized anisotropic strain engineering of strained superlattice (SL) templates for the lateral ordering of one-and two-dimensional (2-D) InGaAs QD arrays on planar (1 0 0) [7] and (3 1 1)B oriented GaAs substrates [8] by molecular-beam epitaxy (MBE) and linear InAs QD arrays on planar (1 0 0) oriented InP substrates by chemical-beam epitaxy (CBE) [9], which ultimately have been vertically stacked to produce a three-dimensionally selfordered QD crystal with excellent optical properties [10]. To extend this concept, in this study, we demonstrate the formation of periodic 2-D InAs QD arrays on InP (3 1 1)B substrates by self-organized anisotropic strain engineering of InAs/InGaAsP SL templates in CBE.…”

Section: Introductionmentioning

confidence: 99%

Formation of two-dimensional InAs quantum dot arrays by self-organized anisotropic strain engineering on InP (311)B substrates

Sritirawisarn¹,

Otten²,

Rodriguez³

et al. 2010

Journal of Crystal Growth

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Formation trends of ordered self-assembled nanoislands on stepped substrates

Liang

Zhu

Kong

et al. 2010

Journal of Applied Physics

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The growth of ordered self-assembled nanoislands on stepped substrates is studied systematically by kinetic Monte Carlo simulations. As the terrace width is small, the formation of nanoislands is confined in the steps and nanoislands ordered in lines or nanowires can be obtained. The Schwoebel barrier at the step edges has a great influence on the evolution of both the size and space distributions of the islands. When the terrace width is relatively large, self-ordering of nanoislands in the center regions of the terraces happens. An unexpected trend of the nanoisland self-ordering is found as the deposition thickness is larger than 0.2 ML, which can be related to the attractive migrations between nearby islands.

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Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal

Abstract: Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by selforganized anisotropic strain engineering : a self-ordered quantum dot crystal Sritirawisarn, N.; Otten, van, F.W.M.; Eijkemans, T.J.; Nötzel, R.

Cited by 4 publications

References 15 publications

Quantum Dots for Future Nanophotonic Devices: Lateral Ordering, Position, and Number Control

Quantum Dots for Future Nanophotonic Devices: Lateral Ordering, Position, and Number Control

Formation of two-dimensional InAs quantum dot arrays by self-organized anisotropic strain engineering on InP (311)B substrates

Formation trends of ordered self-assembled nanoislands on stepped substrates

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