2010
DOI: 10.1117/12.847015
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Wavelength dependence of carbon contamination on mirrors with different capping layers

Abstract: Optics contamination remains one of the challenges in extreme ultraviolet (EUV) lithography. In addition to the desired wavelength near 13.5 nm (EUV), plasma sources used in EUV exposure tools emit a wide range of out-of-band (OOB) wavelengths extending as far as the visible region. We present experimental results of contamination rates of EUV and OOB light using a Xe plasma source and filters. Employing heated carbon tape as a source of hydrocarbons, we have measured the wavelength dependence of carbon contam… Show more

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Cited by 4 publications
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“…The general trend of increasing contamination rate with wavelength in the rage (10 to 80) nm has been observed experimentally 18 and predicted by models 19 . A likely explanation of this behavior is that both the (gas phase) photoadsorption cross section and the secondary electron yield for C increase to a maximum around 70 nm.…”
Section: Wavelength Scalingmentioning
confidence: 81%
“…The general trend of increasing contamination rate with wavelength in the rage (10 to 80) nm has been observed experimentally 18 and predicted by models 19 . A likely explanation of this behavior is that both the (gas phase) photoadsorption cross section and the secondary electron yield for C increase to a maximum around 70 nm.…”
Section: Wavelength Scalingmentioning
confidence: 81%