Wavelength-tunable (1.55-μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy

Abstract

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Low density 1.55 μm InAs/InGaAsP/InP (100) quantum dots enabled by an ultrathin GaAs interlayer

“…The larger PL linewidth for higher TBA flow rate is attributed to increasing QD size fluctuations for larger As/P exchange, similar to that reported in Ref. 8 for QDs formed by 3 ML InAs. For the TBA flow rate of 5 SCCM the InAs amount has been reduced to 1.9 ML, still forming QDs.…”

“…At the lowest TBA flow rate of 0.5 SCCM, dense dashlike structures are formed with an average density of 2.0ϫ 10 10 cm −2 , similar to those formed by 3 ML InAs. 8 For the higher TBA flow rate of 3 SCCM, dotlike structures form, however, with high average density of 2.6 ϫ 10 10 cm −2 , large size, and redshifted PL peak at 1642 nm, again comparable to those formed by 3 ML InAs. 8 The shape transition in itself is interesting, however, beyond the scope of this paper.…”

“…Without GaAs interlayer a drastic increase of the QD density is observed and the QD density is clearly higher at reduced InAs growth rate even with a GaAs interlayer. Hence, the well-known suppression of As/P exchange during InAs growth by the GaAs interlayer 8,9 enables low density QDs for small InAs amount by avoiding excess InAs formation while strong As/P exchange in the absence of the GaAs interlayer and at high group-V flow rate and low growth rate always causes the QD density to increase.…”

gfactors and diamagnetic coefficients of electrons, holes, and excitons in InAs/InP quantum dots

“…Details of the growth of these roughly cylindrical InAs dots can be found in Ref. 26. Recent experimental work 27 has investigated the magneto-optical properties of such dots by probing the component of the exciton g tensor along the [001] direction (this component is from now on referred as the g factor).…”

Distribution control of 1.55μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy

“…Beneath the QDs, 1.5 ML GaAs were inserted at 515°C to tune the QD emission wavelength into the 1.55 m range. 12 The morphology of the InP pyramids and QDs was investigated by atomic force microscopy ͑AFM͒ in air. For micro-photoluminescence ͑micro-PL͒ of InP capped QDs, the 632.8 nm line of a He-Ne laser with 10 W power was used as the excitation source.…”