Wavelength Tunable Laser Using an Interleaved Rear Reflector

Engelstaedter, J.P.; Roycroft, B.; Peters, Frank; Corbett, Brian

doi:10.1109/lpt.2009.2035637

Cited by 16 publications

(6 citation statements)

References 5 publications

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“…As expected, equation (10) shows that the two-color point varies proportionally to μ tc , while equation (11) shows that an increasing difference of the differential gains σ leads to shrinking of the two-color region.…”

Section: Single-contact Devicesupporting

confidence: 67%

“…Another approach to this problem is based on discrete mode lasers, where modal selection is provided by slots etched into the ridge waveguide of the diode laser. The tunability of these devices is limited to a smaller number of modes, but less cost and complexity can be achieved with respect to alternative solutions [10,11]. Among these devices a dual-contact twomode semiconductor laser has recently been characterized with high-performance switching between two wavelengths [12].…”

Section: Introductionmentioning

confidence: 99%

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Wavelength switching performance of single- and dual-contact two-mode semiconductor lasers with current modulation

Brandonisio¹,

Heinricht²,

Osborne³

et al. 2011

J. Opt.

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The wavelength switching performance of single- and dual-contact two-mode semiconductor lasers is studied. These devices are characterized experimentally in terms of switching time, frequency chirp, contrast ratio and current modulation amplitude. Models based on multimode rate equations are used for reproducing these experimental results with good agreement between theory and experiment. The benefits of a dual-contact device are shown with respect to a single-contact device.

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Section: Single-contact Devicesupporting

confidence: 67%

Section: Introductionmentioning

confidence: 99%

Wavelength switching performance of single- and dual-contact two-mode semiconductor lasers with current modulation

Brandonisio¹,

Heinricht²,

Osborne³

et al. 2011

J. Opt.

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show abstract

“…Wide tunability is commonly obtained utilizing a Vernier effect based on two cavities with different free-spectral ranges (FSRs) [24][25][26]. The Vernier effect has been shown using Bragg grating reflectors or ring resonators [24][25][26][27][28], with ring resonators being commonly used for wide wavelength tuning purposes.…”

Section: Introductionmentioning

confidence: 99%

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Vermeulen

Magden

et al. 2018

Opt. Express

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A tunable laser source is a crucial photonic component for many applications, such as spectroscopic measurements, wavelength division multiplexing (WDM), frequency-modulated light detection and ranging (LIDAR), and optical coherence tomography (OCT). In this article, we demonstrate the first monolithically integrated erbium-doped tunable laser on a complementary-metal-oxide-semiconductor (CMOS)-compatible silicon photonics platform. Erbium-doped AlO sputtered on top is used as a gain medium to achieve lasing. The laser achieves a tunability from 1527 nm to 1573 nm, with a >40 dB side mode suppression ratio (SMSR). The wide tuning range (46 nm) is realized with a Vernier cavity, formed by two SiN microring resonators. With 107 mW on-chip 980 nm pump power, up to 1.6 mW output lasing power is obtained with a 2.2% slope efficiency. The maximum output power is limited by pump power. Fine tuning of the laser wavelength is demonstrated by using the gain cavity phase shifter. Signal response times are measured to be around 200 μs and 35 µs for the heaters used to tune the Vernier rings and gain cavity longitudinal mode, respectively. The linewidth of the laser is 340 kHz, measured via a self-delay heterodyne detection method. Furthermore, the laser signal is stabilized by continuous locking to a mode-locked laser (MLL) over 4900 seconds with a measured peak-to-peak frequency deviation below 10 Hz.

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“…However, most of them involved several re-growth steps (such as Y-branch passive waveguide regrowth) or complex fabrication processes. On the other hand, due to the Manuscript progress in micro/nano-fabrication, artificial structures such as air slot and dry-etched distributed Bragg reflectors (DBRs) became available for integration or performance enhancement [15]- [19]. These structures, often made by dry etch, can provide a post-epitaxial adjustment to strengthen device performance, and also eliminate tedious dielectric deposition steps.…”

Section: Introductionmentioning

confidence: 99%

“…These structures, often made by dry etch, can provide a post-epitaxial adjustment to strengthen device performance, and also eliminate tedious dielectric deposition steps. Single mode lasers and wavelength tunable lasers were demonstrated previously using this idea [15]- [17], [20]. The dry etch process needs to rely on precise photolithography which can be difficult if the structure is in sub-micron regime and the etch step has to be carefully included in the process.…”

Section: Introductionmentioning

confidence: 99%

Compact Photonic Integrated Chip for Tunable Microwave Generation

Chien

et al. 2014

IEEE Photon. Technol. Lett.

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A tunable microwave generation is demonstrated by monolithically integrated photonic chip, which combines a mirror section and two distributed feedback (DFB) lasers. The focus ion beam technology was employed to achieve high-quality air/semiconductor slab for the mirror. Two DFB lasers (named slave and master lasers, respectively) can operate in a single fundamental mode when they are individually pumped. A microwave signal with the differential frequency between the two lasers can be obtained through optical heterodyning. A tunable microwave signal up to 25.5 GHz can be generated by adjusting the injected currents of the two DFB lasers. A four-wave mixing spectrum was measured and the linewidth of the generated radio frequency signal is 1.9 MHz.

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Wavelength Tunable Laser Using an Interleaved Rear Reflector

Cited by 16 publications

References 5 publications

Wavelength switching performance of single- and dual-contact two-mode semiconductor lasers with current modulation

Wavelength switching performance of single- and dual-contact two-mode semiconductor lasers with current modulation

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Compact Photonic Integrated Chip for Tunable Microwave Generation

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