Wet Chemical Digital Etching of GaAs at Room Temperature

DeSalvo, G.; Bozada, C.; Ebel, J.; Barrette, J.; Cerny, Charles; Dettmer, R.; Gillespie, J.; Havasy, C.; Jenkins, T.; Nakano, Kenichi; Pettiford, C.; Quach, T.; Sewell, J.; Via, G. D.

doi:10.1149/1.1837266

Cited by 86 publications

(61 citation statements)

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“…4,111 The benefit of ALE in maintaining stoichiometry and providing smooth surfaces during directional etching is especially attractive for these materials. ALE has been studied on several III-V materials, include GaAs, 32,38,40,43,47,56,[64][65][66][67]98,[112][113][114][115][116] InGaAs, InP, AlGaAs, InAlAs, and AlGaN. 34,50,[56][57][58]68,69,97 The majority are on directional ALE using alternating chlorination [ Fig.…”

Section: Iii-v Materialsmentioning

confidence: 99%

“…50 Researchers have concluded minimal damage in directional ALE of III-Vs based also on electrical characteristics similar to the unetched surface. 50,[56][57][58] About a quarter of the studies on III-V materials involved isotropic ALE, 34,[114][115][116] originally referred to as "digital etching" and dating back to the 1990s. The reactive layer is formed by oxidizing the substrate consuming the topmost surface (reaction A), as represented in Fig.…”

Section: Iii-v Materialsmentioning

confidence: 99%

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Overview of atomic layer etching in the semiconductor industry

Kanarik¹,

Lill²,

Hudson³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

484

372

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Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

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Section: Iii-v Materialsmentioning

confidence: 99%

Section: Iii-v Materialsmentioning

confidence: 99%

Overview of atomic layer etching in the semiconductor industry

Kanarik¹,

Lill²,

Hudson³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

484

372

View full text Add to dashboard Cite

show abstract

“…Previously, oxidant solutions such as hydrogen peroxide (H 2 O 2 ) and mixture of H 2 O 2 and acid solution have been typically used as the oxidant solutions in the wet-chemical digital etching technique. However, they are not suitable for the pattern reduction of large-scale substrates, because of their weak oxidizing power or non-uniform reactivity [19,20].…”

Section: Approachmentioning

confidence: 99%

Realization of large-scale sub-10 nm nanogratings using a repetitive wet-chemical oxidation and etching technique

Choi

Seo

et al. 2017

Micro and Nano Syst Lett

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Despite many efforts to create nanogratings to exploit exceptionally enhanced nano-sized effects, realizing sub-10 nm nanogratings on a large area still remains a great challenge. Herein, we demonstrate fabrication of an inchscale sub-10 nm nanogratings with simple and reliable features, by employing a repetitive wet-chemical oxidation and etching technique. We found that a few atomic layers of the silicon surface are naturally oxidized in a nitric acid (HNO 3 ) solution, which enables the surface of the silicon to be etched with 1.0 nm resolution by selectively removing the oxide layers. By combining this high-precision etching technique with silicon nanogratings previously prepared by conventional methods, we successfully demonstrated a sub-10 nm silicon nanogratings on an inch-scale wafer.

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“…The digital wet etch process comprises a number of short etch cycles in H 2 O 2 and diluted HCl. The self-limiting nature of the GaAs oxidation and oxide removal in the digital wet etch gives a precise, reproducible and controlled GaAs etch rate of ~1.5 nm/cycle [16].…”

Section: Fabricationmentioning

confidence: 99%

Silicon-integrated short-wavelength hybrid-cavity VCSEL

Haglund¹,

Kumari²,

Westbergh³

et al. 2015

Opt. Express

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Abstract:We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based "half-VCSEL" has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxanebis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field extending over the silicon-and GaAs-based parts of the cavity. A 9 µm oxide aperture diameter VCSEL with a threshold current of 1.2 mA produces 1.6 mW optical output power at 6.0 mA bias current with a wavelength of ~845 nm.

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Wet Chemical Digital Etching of GaAs at Room Temperature

Cited by 86 publications

References 1 publication

Overview of atomic layer etching in the semiconductor industry

Overview of atomic layer etching in the semiconductor industry

Realization of large-scale sub-10 nm nanogratings using a repetitive wet-chemical oxidation and etching technique

Silicon-integrated short-wavelength hybrid-cavity VCSEL

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