Wet chemical etching method for BST thin films annealed at high temperature

Zhang, R.T.; Yang, Chengtao; Yu, An; Wang, B.; Tang, Haixiong; Chen, H.W.; Zhang, J.H.

doi:10.1016/j.apsusc.2008.05.233

Cited by 14 publications

(6 citation statements)

References 18 publications

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“…However, it is challenge to utilize the BST bulk materials in the top-down process due to its fragility and low etching rate. 18 On the other hand, the bottom-up fabrication technique is preferred to the top-down technique because that deposition of thin film dielectric materials has been reported with successes. Among various thin film fabrication methods, [19][20][21][22] RF magnetron sputtering is favorable due to its ease of implementation, superior compositional reproducibility, controllability, good crystallinity, and desirable dielectric properties.…”

mentioning

confidence: 99%

Flexoelectricity in barium strontium titanate thin film

Kwon

Huang

Shu

et al. 2014

Applied Physics Letters

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Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba0.7Sr0.3TiO3 thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

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mentioning

confidence: 99%

Flexoelectricity in barium strontium titanate thin film

Kwon

Huang

Shu

et al. 2014

Applied Physics Letters

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“…Moreover, BHF is known to attack SiO2, which might be inconvenient when using Si substrates. In order to selectively etch the BST thin film and to control the etching rate, catalysis of the HF agent was proposed [8]. HF is a weak acid and hence is partially disassociated in solution [17]:…”

Section: Catalysis and Optimization Of The Etching Solutionmentioning

confidence: 99%

“…The etching rate has been controlled by dilution of the acids. Only few studies have already shown that buffered hydrofluoric acid (BHF) combined with an acid catalyst is an effective etching solution [8,9], the details of the ongoing chemical reactions, however, are not reported.…”

Section: Introductionmentioning

confidence: 99%

Study of wet chemical etching of BaSrTiO3 ferroelectric thin films for intelligent antenna application

Pavy

Borderon

Baron

et al. 2015

J Sol-Gel Sci Technol

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Wet chemical etching of (Ba1-xSrx)TiO3 (BST) thin films has been investigated. The etchant was prepared from buffered hydrofluoric acid (BHF) and nitric acid (HNO3), BHF being the reactive agent while HNO3 acts as a catalyst. X-ray diffraction and energy dispersive X-ray spectrometry were performed in order to qualitatively and quantitatively follow the etching process. Scanning electron microscopy and a profilometer were used for determining the etching quality. The ferroelectric thin films were elaborated by a modified sol-gel process and by spin-coating on insulating (Si-wafers) or metal (stainless steel) substrates. Classic photolithography technique and a positive photo resist were used for the transfer of the patterns. Appropriate water dilution reduces the etching speed, thus allowing a better visual control of the process.

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“…A peel-off process is used to create the metal pattern of the bottom electrode on the LaAlO 3 substrates. The Ba 0.4 Sr 0.6 TiO 3 (BST) film is grown (1000 nm) on the pre-patterned Pt/Ti/LaAlO 3 substrates, and then annealed at 800°C for 30 min in air, and then patterned using a kind of special etching solution for BST thin films annealed at high temperature [8]. Au/Ni-Cr metal stacks are evaporated as the top electrode by a novel two-cavity resistance evaporating equipment for preserving the good adhesion and overcoming the diffusion between Au layer and Ni-Cr layer to reduce the ohmic loss of the center signal transmission line.…”

Section: Device Fabricationmentioning

confidence: 99%

Tunable Coplanar Waveguide Phase Shifter Using BaxSr1−xTiO3 Thin Films on LaAlO3 Substrates

Tang

Yang

Zhang

et al. 2010

J Infrared Milli Terahz Waves

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A kind of distributed coplanar waveguide (CPW) phase shifter based on LaAlO 3 substrates is designed and fabricated in this paper. The Ba 0.4 Sr 0.6 TiO 3 (BST) thin films employed in the circuits are deposited by RF magnetron sputtering, and then annealed at 800°C for 30 min in air. The dielectric tunability, loss tangent of the BST films are respectively 43.7% and 0.017 at 100 kHz and 30 V, the leakage current is approximately 1× 10 −9 A/cm 2 at zero bias voltage. The CPW phase-shifter designed is subsequently fabricated in order to obtain a 360°phase shift at 30 GHz with a moderate bias voltage. The maximal phase shift is 372°at 22.5 GHz with a bias voltage of 40 V.

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Wet chemical etching method for BST thin films annealed at high temperature

Cited by 14 publications

References 18 publications

Flexoelectricity in barium strontium titanate thin film

Flexoelectricity in barium strontium titanate thin film

Study of wet chemical etching of BaSrTiO3 ferroelectric thin films for intelligent antenna application

Tunable Coplanar Waveguide Phase Shifter Using BaxSr1−xTiO3 Thin Films on LaAlO3 Substrates

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