Wet Chemical Etching with Lactic Acid Solutions for InP ‐ based Semiconductor Devices

Abstract

We report the incorporation of lactic acid etch mixtures in selective and nonselective etches suitable for InP-based III-V compound semiconductor heterostructure devices. Elimination and reduction of surface structures and controllable sidewall profiles are possible with solutions operating in the diffusion-limited, chemical activation-limited transition region.

A kinetic study of structured surface relief patterning of GaP $$(\bar 1\bar 1\bar 1)$$

“…5 Etching of semiconductors is kinetic (or reaction) controlled when the supply of the etching species exceeds their rate of consumption in the chemical reactions occurring at the semiconductor surface. 27 Diffusion controlled processes are recognized by rounded profiles near the mask edges and the same etching rate on different crystallographic faces. If the etch shows different etching rates on different surfaces, it is a kinetically controlled process.…”