Weyl Semiconductor Te/Sb2Se3 Heterostructure for Broadband Photodetection and Its Binary Photoresponse by C60 as Charge‐Regulation Medium

Zhang, Xingchao; Yang, Yunkun; Liu, Xianchao; Zhang, Chaoyi; Peng, Silu; Han, Jiayue; Zhou, Hongxi; Gou, Jun; Xiu, Faxian; Wang, Jun

doi:10.1002/adom.202101256

Cited by 15 publications

(9 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For quantitatively evaluating the photodetection performance of Gr/Bi 2 Te 3 /GaAs heterojunction, the key figure-of-merits including responsivity ( R i ) and specific detectivity ( D* ) were calculated according to the following formulas: where P light , I ph , e , and A are incident power density, photocurrent, unit electron charge, and photosensitive area of device, respectively.…”

Section: Results and Discussionmentioning

confidence: 99%

Epitaxial Topological Insulator Bi₂Te₃ for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

et al. 2022

Self Cite

View full text Add to dashboard Cite

Three dimensional topological insulators have a thriving application prospect in broadband photodetectors due to the possessed topological quantum states. Herein, a large area and uniform topological insulator bismuth telluride (Bi 2 Te 3 ) layer with high crystalline quality is directly epitaxial grown on GaAs(111)B wafer using a molecular beam epitaxy process, ensuring efficient out-of-plane carriers transportation due to reduced interface defects influence. By tiling monolayer graphene (Gr) on the as-prepared Bi 2 Te 3 layer, a Gr/Bi 2 Te 3 / GaAs heterojunction array prototype was further fabricated, and our photodetector array exhibited the capability of sensing ultrabroad photodetection wavebands from visible (405 nm) to mid-infrared (4.5 μm) with a high specific detectivity (D*) up to 10 12 Jones and a fast response speed at about microseconds at room temperature. The enhanced device performance can be attributed to enhanced light−matter interaction at the high-quality heterointerface of Bi 2 Te 3 /GaAs and improved carrier collection efficiency through graphene as a charge collection medium, indicating an application prospect of topological insulator Bi 2 Te 3 for fast-speed broadband photodetection up to a mid-infrared waveband. This work demonstrated the potential of integrated topological quantum materials with a conventional functional substrate to fabricate the next generation of broadband photodetection devices for uncooled focal plane array or infrared communication systems in future.

show abstract

Section: Results and Discussionmentioning

confidence: 99%

Epitaxial Topological Insulator Bi₂Te₃ for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

et al. 2022

Self Cite

View full text Add to dashboard Cite

show abstract

“…The PD exhibited photocurrents of 8.60 × 10 −10 , 2.11 × 10 −8 , 8.15 × 10 −8 , 1.38 × 10 −7 , and 3.25 × 10 −7 A at 0, 1, 3, 5, and 10 V, respectively. The gradually increasing value with bias indicates that photogenerated carriers would be more easily collected under an external electric field owing to the improved separation efficiency of electron-hole pairs [39]. Furthermore, the dependence of photocurrent on light intensity was investigated using a 450-nm laser light source, considering that the photo-response of the PD is closely related to incident light intensity.…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, considering the limitation of the photoconductive device structure, constructing a back-to-back (BTB) heterojunction through the combination of the 3D Dirac semimetal with a high-resistance semiconductor may be a reliable strategy for achieving photodetection, because the dark current and device noise will be effectively suppressed [33][34][35]. Antimony selenide (Sb 2 Se 3 ) features a superior light absorption coefficient (>10 6 cm −1 ), suitable band gap, and excellent chemical stability, and thus has the potential for achieving fastresponse broadband photodetection by forming a BTB heterojunction with the 3D Dirac semimetal (Cd 1−x Zn x ) 3 As 2 [36][37][38][39]. Moreover, from the perspective of device integration, crosstalk suppression and intra-device isolation in adjacent devices are imperative, which require precise patterning of the photosensitive film materials.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional Dirac semimetal (Cd1−xZnx)3As2/Sb2Se3 back-to-back heterojunction for fast-response broadband photodetector with ultrahigh signal-to-noise ratio

et al. 2022

Self Cite

View full text Add to dashboard Cite

Three-dimensional (3D) Dirac semimetal materials have great application prospects in broad-spectrum photodetectors (PDs) working at wavebands up to the mid/far infrared region owing to their unique topological energy-band architectures and excellent photoelectric properties. However, the relatively high dark current in most Dirac semimetalbased PDs limits their photodetection performance, with poor signal-to-noise ratios (SNRs). Herein, we developed an ultralow-noise-level PD linear array based on a 3D Dirac semimetal (Cd 1−x Zn x ) 3 As 2 /Sb 2 Se 3 back-to-back (BTB) heterojunction using a molecular beam epitaxy (MBE)-grown (Cd 1−x Zn x ) 3 As 2 film. Benefiting from the effective double-heterojunction design strategy, the as-fabricated (Cd 1−x Zn x ) 3 As 2 /Sb 2 Se 3 lineararray PD exhibited an outstanding photodetection capacity from the visible to mid-infrared region (450 nm to 4.5 μm), with the highest recorded SNR close to 10 4 , excellent peak specific detectivity of 5.2 × 10 12 Jones, and high response speed of about 87.5 μs at room temperature. Furthermore, the PD exhibited long-term stability and uniformity as only minor photocurrent fluctuations occurred among different PD linear-array units demonstrating the feasibility of the PD for advanced optoelectronic applications, such as real-time light trajectory tracking. This work provides a reference strategy for the fabrication of fast-response broadband PDs with ultrahigh SNRs using the 3D Dirac semimetal (Cd 1−x Zn x ) 3 As 2 /Sb 2 Se 3 BTB heterojunction and demonstrates the great prospect of 3D Dirac semimetal materials for the manufacture of fastresponse uncooled focal-plane-array devices.

show abstract

“…[87][88][89] The Weyl semiconductor Te (nearly 0.4 eV) fills up interspace from VIS to midinfrared (MIR). [90] The respective spectrum of organic and 2D materials are depicted in Figure 3, giving an intuitive comparison for complementary detection design. Thus, integration of the appropriate and CT types can broaden the detection range and implement unique optoelectronic.…”

Section: Detection Spectrum Of 2d Inorganic/organicmentioning

confidence: 99%

Recent Progress in 2D Inorganic/Organic Charge Transfer Heterojunction Photodetectors

Han

Wang

Han

et al. 2022

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

2D materials possess superior optoelectronic properties, such as ultrahigh mobility and broadband photoresponse, making them one of the most vital platforms for diversified photodetectors. However, atomic thickness 2D materials usually suffer from intrinsic low absorption. To promote the photo detector performance, a feasible method is to integrate the 2D materials with lowcost, flexible, and tunable organics that form a charge transfer (CT) heterojunction. As results, indepth multifunctional CT 2Dinorganic/organic detector exhibits extended functions such as lowpower consumption, in memory detection, and opticalbio synapse to meet the demand of contem porary photonic cell. Particularly, the progresses in waferscale monocrystal of both 2D and organic materials render vast potential applications with operation frequencies ranging from ultraviolet to terahertz. Here, the recent advances of 2Dinorganic/organic CT photodetectors are comprehensively reviewed by several classifications. Future developments and applications in optical biology, synapsis, and machine vision are also highlighted.

show abstract

Weyl Semiconductor Te/Sb₂Se₃ Heterostructure for Broadband Photodetection and Its Binary Photoresponse by C₆₀ as Charge‐Regulation Medium

Cited by 15 publications

References 41 publications

Epitaxial Topological Insulator Bi₂Te₃ for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

Epitaxial Topological Insulator Bi₂Te₃ for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

Three-dimensional Dirac semimetal (Cd1−xZnx)3As2/Sb2Se3 back-to-back heterojunction for fast-response broadband photodetector with ultrahigh signal-to-noise ratio

Recent Progress in 2D Inorganic/Organic Charge Transfer Heterojunction Photodetectors

Contact Info

Product

Resources

About

Weyl Semiconductor Te/Sb2Se3 Heterostructure for Broadband Photodetection and Its Binary Photoresponse by C60 as Charge‐Regulation Medium

Cited by 15 publications

References 41 publications

Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

Three-dimensional Dirac semimetal (Cd1−xZnx)3As2/Sb2Se3 back-to-back heterojunction for fast-response broadband photodetector with ultrahigh signal-to-noise ratio

Recent Progress in 2D Inorganic/Organic Charge Transfer Heterojunction Photodetectors

Contact Info

Product

Resources

About

Weyl Semiconductor Te/Sb₂Se₃ Heterostructure for Broadband Photodetection and Its Binary Photoresponse by C₆₀ as Charge‐Regulation Medium

Epitaxial Topological Insulator Bi₂Te₃ for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

Epitaxial Topological Insulator Bi₂Te₃ for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium