2008 Asia and South Pacific Design Automation Conference 2008
DOI: 10.1109/aspdac.2008.4484007
|View full text |Cite
|
Sign up to set email alerts
|

Within-die process variations: How accurately can they be statistically modeled?

Abstract: Abstract-Within-die process variations arise during integrated circuit (IC) fabrication in the sub-100nm regime. These variations are of paramount concern as they deviate the performance of ICs from their designers' original intent. These deviations reduce the parametric yield and revenues from integrated circuit fabrication. In this paper we provide a complete treatment to the subject of within-die variations. We propose a scan-chain based system, vMeter, to extract within-die variations in an automated fashi… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
24
0

Year Published

2011
2011
2016
2016

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 40 publications
(24 citation statements)
references
References 17 publications
0
24
0
Order By: Relevance
“…As introduced before, local variations are difficult to capture, especially in the presence of strong spatial correlation. Following [4] [21] [22] the die can be considered as consisting of a grid of 1 2 n n × locations. A location on the chip will be denoted by ( )…”
Section: Parameter Variations and Uncertainties Characterizationmentioning
confidence: 99%
See 1 more Smart Citation
“…As introduced before, local variations are difficult to capture, especially in the presence of strong spatial correlation. Following [4] [21] [22] the die can be considered as consisting of a grid of 1 2 n n × locations. A location on the chip will be denoted by ( )…”
Section: Parameter Variations and Uncertainties Characterizationmentioning
confidence: 99%
“…In addition, [4] and [5] have pointed out that it is not accurate to use Gaussian distribution to model local variations. In particular, [4] suggested a new statistical model, the Matern model, to capture the local variations based on the measurement data for 90 nm chips. The contributions of this paper can be summarized as follows.…”
Section: Introductionmentioning
confidence: 99%
“…In order to model the spatial non-uniformity of L ef f as well as its correlation we have used Gaussian Random Fields (GRF) [35]. When using GRF, with stationary and isotropic fields [35] [92], the variance (σ 2 i ) of the random field L(x, y), representing transistor gate length (L ef f ) in the (x,y) die position, depends only on the euclidean distance between two given locations.…”
Section: Modeling Wire Dimension Variationmentioning
confidence: 99%
“…When using GRF, with stationary and isotropic fields [35] [92], the variance (σ 2 i ) of the random field L(x, y), representing transistor gate length (L ef f ) in the (x,y) die position, depends only on the euclidean distance between two given locations. Then, the gate length distribution (L) only depends on a correlation function.…”
Section: Modeling Wire Dimension Variationmentioning
confidence: 99%
See 1 more Smart Citation