Work function analysis of GaN-based lateral polarity structures by Auger electron energy measurements

Niebelschütz, M.; Ecke, G.; Cimalla, V.; Tonisch, Katja; Ambacher, O.

doi:10.1063/1.2353785

Cited by 12 publications

(7 citation statements)

References 15 publications

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“…This study also showed a slight shift in the Raman E 2 peak with polarity, indicative of slightly larger compressive in-plane stress for the Gapolar material [33]. Work function studies have shown a difference of 0.2 -0.25 eV between the two polar regions [35,36].…”

Section: Po Gan On Sapphire Substratessupporting

confidence: 53%

“…This intense emission was also observed in UV photoelectron emission microscopy (PEEM) [35]. In transmission electron microscopy (TEM) images, scanning electron microscopy (SEM) images, etching studies, and work function investigations, the IDB has been shown to range laterally in thickness from 50nm to 5µm and have mixed polarity [12,36,37]. This mixed polarity region has been attributed to imprecise etching of the AlN buffer layer and could contribute to a non-vertical IDB [32,37].…”

Section: Po Gan On Sapphire Substratesmentioning

confidence: 84%

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Progress in periodically oriented III-nitride materials

Hite

2016

Journal of Crystal Growth

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The ability to grow III-nitride structures with alternating c-plane orientation has garnered interest in using these materials for new application spaces, such as frequency conversion. An overview of recent progress in growing periodically oriented (PO) III-nitrides is discussed, including AlN, AlGaN, and GaN. Successes in fabricating thick PO GaN structures (>500mm) for uses in frequency conversion are highlighted.

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Section: Po Gan On Sapphire Substratessupporting

confidence: 53%

Section: Po Gan On Sapphire Substratesmentioning

confidence: 84%

Progress in periodically oriented III-nitride materials

Hite

2016

Journal of Crystal Growth

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“…As a basic study, the surface band bending of Ga-and N-faces of GaN has also been investigated. [7][8][9] On the other hand, for electron device application, the polarization along the c-axis induces a high sheet carrier density of more than 1 × 10 13 cm −2 at an AlGaN=GaN heterointerface, resulting in a two-dimensional electron gas (2DEG). Such a high sheet carrier density forces us to fabricate only depletion-mode high-electron-mobility transistors (HEMTs).…”

Section: Introductionmentioning

confidence: 99%

Electrical characteristics of Au/Ni Schottky diodes on cleaved m-plane surfaces of free-standing n-GaN substrates

Naganawa

Aoki

Mishima

et al. 2016

Jpn. J. Appl. Phys.

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We report electrical characteristics of 12 Ni Schottky contacts formed on an m-plane surface, which is a cleaved side surface of a c-plane free-standing n-GaN wafer. We observed a variety of distributions of surface steps with heights up to 5 nm in the contact area. The Schottky barrier heights obtained from current–voltage, capacitance–voltage, and photoresponce results distribute in a small range of 0.67–0.79 eV. The n-value is as good as 1.01 to 1.04. Independent of the step height, the barrier height and n-value variations are nearly absent. One possible reason for this is that the step facets consist of an m-plane. We found that the cleaving method can be utilized to form Schottky contacts on m-plane n-GaN surfaces in order to reveal the basic characteristics.

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“…4 It was suggested that optical devices based on such polar junctions could lead to a new generation of optical devices. 5 In the following years only few publications dealing with the optical, electrical, and structural properties of IDBs were published, 6,7 which might be related to difficulties in the controlled growth of lateral polarity junctions (LPJs). For that reason many properties of polar junctions are still unknown.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

Kirste

Collazo

Callsen

et al. 2011

Journal of Applied Physics

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We report on fundamental structural and optical properties of lateral polarity junctions in GaN. GaN with Ga-to N-polar junctions was grown on sapphire using an AlN buffer layer. Results from scanning electron microscopy and Raman spectroscopy measurements indicate a superior quality of the Ga-polar GaN. An extremely strong luminescence signal is observed at the inversion domain boundary (IDB). Temperature dependent micro photoluminescence measurements are used to reveal the recombination processes underlying this strong emission. At 5 K the emission mainly arises from a stripe along the inversion domain boundary with a thickness of 4-5 lm. An increase of the temperature initially leads to a narrowing to below 2 lm emission area width followed by a broadening at temperatures above 70 K. The relatively broad emission area at low temperatures is explained by a diagonal IDB. It is shown that all further changes in the emission area width are related to thermalization effects of carriers and defects attracted to the IDB. The results are successfully used to confirm a theoretical model for GaN based lateral polarity junctions. Due to the strong and pronounced emission of IDBs even at elevated temperatures, it is demonstrated that lateral polarity junctions exhibit a strong potential for future high efficiency devices. V

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Work function analysis of GaN-based lateral polarity structures by Auger electron energy measurements

Cited by 12 publications

References 15 publications

Progress in periodically oriented III-nitride materials

Progress in periodically oriented III-nitride materials

Electrical characteristics of Au/Ni Schottky diodes on cleaved m-plane surfaces of free-standing n-GaN substrates

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

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