Work function tuning through dopant scanning and related effects in Ni fully silicided gate for sub-45nm nodes CMOS

Aime, D.; Froment, B.; Cacho, F.; Carron, V.; Descombes, S.; Morand, Y.; Emonet, N.; Wacquant, F.; Farjot, Thierry; Jullian, S.; Laviron, C.; Juhel, M.; Pantel, R.; Molins, Régine; Delille, D.; Halimaoui, A.; Bensahel, D.; Souifi, Abdelkader

doi:10.1109/iedm.2004.1419073

Cited by 23 publications

(15 citation statements)

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“…An O 2 post-deposition anneal at 800°C was performed and a phosphorus-implanted polysilicon layer was deposited. Some samples were then totally siliciced with a two-step process (Nickel deposition then anneal) to form TOSI NiSi arsenic doped gates [1].…”

Section: Samples and Experimental Proceduresmentioning

confidence: 99%

Parameters extraction of hafnium based gate oxide capacitors

Nguyen

Busseret

Militaru

et al. 2007

Microelectronics Reliability

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Section: Samples and Experimental Proceduresmentioning

confidence: 99%

Parameters extraction of hafnium based gate oxide capacitors

Nguyen

Busseret

Militaru

et al. 2007

Microelectronics Reliability

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“…1,2 While Hf-based insulators are widely recognized as the preferred high-k dielectrics, the choice of metal gates and their integration into CMOS is still under intensive investigation. [5][6][7] The metal layer contacting the dielectric, which will be referred to as functional metal layer, to some extent, screens the impact of layers on top, even if it is thin. 3 At first glance, the WF is simply determined by the properties of the metal gate material.…”

Section: Influence Of Metal Capping Layer On the Work Function Of Mo mentioning

confidence: 99%

Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks

Schram

Stesmans

et al. 2008

Applied Physics Letters

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Fabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high-k stacks Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks It was found that applying a capping layer has an important impact on the work function ͑WF͒ of Mo gated metal-oxide semiconductor stacks. Before any postmanufacturing thermal treatment, uncapped Mo has a similar WF as one capped with a TaC layer. However, after forming gas anneal ͑FGA͒, the uncapped Mo gate exhibits a significantly higher WF than the TaC capped one does. This is understood as O incorporation during deposition, storage or FGA, and its subsequent piling up at the Mo/dielectric interface during FGA in the former case, which is an effect prevented by TaC capping.

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“…6 Recently, co-implanted ͑As, P͒ dopants were found to have larger work function tuning than individual As or P in a NiSi FUSI gate. 10 In this letter, we investigated the enhanced work function tuning by coimplanting Sb with As and P. Nearly ideal NMOS work function was achieved using Sb/ As/ P preimplanted NiSi FUSI gate. Co-implantation of B with n-type dopant was also investigated and able to adjust work function in the entire Si band gap.…”

mentioning

confidence: 99%