Work-function variation induced fluctuation in bias-temperature-instability characteristics of emerging metal-gate devices and implications for digital design

Rasouli,; Endo, Kazuhiko; Banerjee,

doi:10.1109/iccad.2010.5654260

Cited by 5 publications

(1 citation statement)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…So the metal gate work function should be modeled as a probabilistic distribution rather than a deterministic value. [10] Table 1 [11] shows the physical properties of some metal nitrides of the metal gate. Where titanium nitride (TiN) and tantalum nitride (TaN) are used for n-channel MOS (NMOS) devices, tungsten nitride (WN), and molybdenum nitride (MoN) are used for p-channel MOS (PMOS) devices.…”

Section: Fluctuation Of the Metal-gate Work Functionmentioning

confidence: 99%

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO₂/Si stacked MOSFETs

Ma¹,

Liu²,

Fan³

et al. 2012

Chinese Phys. B

View full text Add to dashboard Cite

In this paper the influences of the metal-gate and high-k/SiO2/Si stacked structure on the metal—oxide—semiconductor field-effect transistor (MOSFET) are investigated. The flat-band voltage is revised by considering the influences of stacked structure and metal—semiconductor work function fluctuation. The two-dimensional Poisson's equation of potential distribution is presented. A threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs is developed by solving these Poisson's equations using the boundary conditions. The model is verified by a two-dimensional device simulator, which provides the basic design guidance for metal-gate/high-k/SiO2/Si stacked MOSFETs.

show abstract

Section: Fluctuation Of the Metal-gate Work Functionmentioning

confidence: 99%

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO₂/Si stacked MOSFETs

Ma¹,

Liu²,

Fan³

et al. 2012

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In_0.53Ga_0.47As GAA MOSFET

Seoane

Indalecio

Comesaña

et al. 2013

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET

Seoane

Indalecio

Comesaña

et al. 2014

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Work-function variation induced fluctuation in bias-temperature-instability characteristics of emerging metal-gate devices and implications for digital design

Cited by 5 publications

References 12 publications

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO₂/Si stacked MOSFETs

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO₂/Si stacked MOSFETs

Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In_0.53Ga_0.47As GAA MOSFET

Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET

Contact Info

Product

Resources

About

Work-function variation induced fluctuation in bias-temperature-instability characteristics of emerging metal-gate devices and implications for digital design

Cited by 5 publications

References 12 publications

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs

Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53Ga0.47As GAA MOSFET

Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET

Contact Info

Product

Resources

About

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO₂/Si stacked MOSFETs

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO₂/Si stacked MOSFETs

Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In_0.53Ga_0.47As GAA MOSFET