X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

Janssen, J.; Heijningen, M. van; Provenzano, G.; Visser, G.C.; Morvan, E.; Vliet, F.E. van

doi:10.1109/csics.2008.23

Cited by 39 publications

(12 citation statements)

References 5 publications

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“…In a typical T / R module application the affected components are either GaAs or SiGe-based and show damage levels in the range of 15 dBm to 20 dBm. These numbers are easily exceeded by the output power of conventional GaN LNAs [6,7]. Hence, some kind of protecting feature for susceptible components is required.…”

Section: Designmentioning

confidence: 99%

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GaN-based single-chip frontend for next-generation X-band AESA systems

Schuh

Sledzik

Reber

2018

Int. J. Microw. Wireless Technol.

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A next generation of active electronically scanned array (AESA) antennas will be challenged with the need for lower size, weight, power, and cost. This leads to enhanced demands especially with regard to the integration density of the radio frequency-part inside aT/Rmodule. The semiconductor material GaN has proven its capacity for high-power amplifiers (HPA), robust receive components as well as switch components for separation of transmit and receive mode. This paper will describe the design and measurement results of a GaN-based single-chipT/Rmodule frontend (HPA, low noise anplifier, and single-pole double-throw (SPDT)) using UMS GH25 technology and covering the frequency range from 8 GHz to 12 GHz. The key performance parameters of the frontend are 13 W minimum transmit (TX) output power over the whole frequency range with peak power up to 17 W. The frontend in receive (RX) mode has a noise figure below 3.2 dB over the whole frequency range, and can survive more than 5 W input power. The large signal insertion loss of the used SPDT is below 0.9 dB at 43 dBm input power level.

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Section: Designmentioning

confidence: 99%

“…High-power handling capabilities of GaN devices are advantageous for high-power amplifiers (HPA) [1][2][3], but also for switches [4,5] and robust LNAs [6,7]. All these devices are key components for T/R modules in AESA applications.…”

Section: Introductionmentioning

confidence: 99%

GaN-based single-chip frontend for next-generation X-band AESA systems

Schuh

Sledzik

Reber

2018

Int. J. Microw. Wireless Technol.

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“…Recently, however, NF better than 1.5 associated to 15 dB linear gain have been demonstrated [9]. Other LNAs have been demonstrated to withstand input power signals up to 36 dBm demonstrating the possibility to eliminate the limiter [10]. This has been obtained with low power consumption preserving the high breakdown voltage (>40 V).…”

Section: Gan Applicationsmentioning

confidence: 99%

GaN for space application: almost ready for flight

Muraro¹,

Guillaume²,

Nhut

et al. 2010

Int. j. microw. wirel. technol.

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On the last years, gallium nitride (GaN) technology has made a remarked breakthrough in the world of microwave electronics. Power transistors are now available. How this GaN technology would impact space-borne units is now a priority concern. Although the power capability of GaN technology is the first obvious profit, GaN could also be used for other applications like low noise amplifiers, mixers, and probably more. The high sustainable temperature of GaN transistors is most striking advantage for in-flight use. This is connected to packaging design which is also experiencing a lot of activities and quick progresses. Of course, space application is dependent upon the full demonstration of reliability and this constitutes another field of investigation. Finally, after 8 years of GaN studies, experimental results are presented: they open wide the road a revolution inside space-borne electronics: the rise of GaN.

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“…X-band Single Pole Double Throw (SPDT) switches have been designed in two European GaN technologies:t he Co-Planar Waveguide (CPW) 0.25 mmA lGaN/GaN PHEMT technology of QinetiQ [6] and the Microstrip 0.25 mmAlGaN/ GaN PHEMT technology of the Alcatel-Thales III-V lab [9]. Both technologies are in aresearch stage and under development.…”

Section: Switch Designmentioning

confidence: 99%

Robust AlGaN/GaN MMIC Receiver Components

Heijningen¹,

Janssen²,

Vliet³

2009

Frequenz

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Apart from deliveringvery high output powers, GaN can also be used to realize robust receiver components, such as Low Noise Amplifiersand Switches. This paper presents the designand measurement results of two GaN X-band switch and LNA MMICs, designed for integration in aradar front end. The switch design shows a1dB compression point of 43 dBm and can withstand input powers of over46dBm. The LNA design shows an input power handling capability of 41 dBm. These results demonstrate the capability of realizing robust receivers with GaN, farbeyond what is currently possible using GaAs.

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X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

Cited by 39 publications

References 5 publications

GaN-based single-chip frontend for next-generation X-band AESA systems

GaN-based single-chip frontend for next-generation X-band AESA systems

GaN for space application: almost ready for flight

Robust AlGaN/GaN MMIC Receiver Components

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