“…This choice of substrate is also very beneficial for practical applications, as the interface between film and insulating substrate, expected to reveal topological states, will also be protected from influencing oxidation effects arising from ambient exposure in technological applications [19]. The growth of Bi has been extensively studied on Si(111) [20][21][22][23][24][25][26][27][28][29] and HOPG [13,[30][31][32] as well as other surfaces [3,4,12,[33][34][35][36][37][38], resulting in fabrication of films with a range of different morphologies, orientations, and strain. The fabrication of Bi films has attracted considerable interest in recent years, as their controlled growth, with focus on morphology and crystallographic orientation, on semiconductor and oxide surfaces is not a trivial task.…”