X-ray conductivity of ZnSe single crystals

Degoda, V.Ya.; Подуст, Г.П.

doi:10.1134/s1063782616050067

Cited by 3 publications

(4 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The dependence of conduction current on the irradiation intensity under constant electric field strength ( X -XRC ) is referred to as the lux-ampere characteristic (LAC), while the dependence of luminescence intensity on the excitation intensity ( X -XRL ) is referred to as the lux-luminescent characteristic (LLC). Earlier, similar studies were carried out [6,7] but only at the temperature of liquid nitrogen. There is no comparison between the lux-ampere and lux-luminescent characteristics or the explanation of the obtained nonlinear dependencies.…”

Section: Introductionmentioning

confidence: 90%

“…Zinc Selenide (ZnSe) [1][2][3][4][5][6][7] is a topic to be investigated. This material was well studied and well researched among the most promising wide-bandgap semiconductors (WBG or WBGS) of the II-VI semiconductor group (A II B VI or A 2 B 6 ).…”

Section: Introductionmentioning

confidence: 99%

“…This material was well studied and well researched among the most promising wide-bandgap semiconductors (WBG or WBGS) of the II-VI semiconductor group (A II B VI or A 2 B 6 ). Nowadays, ZnSe is widely used to create shortwave semiconductor electronics and display systems [7,8]. Primarily, it is due to the recently learned ability to produce high-quality single crystals of a relatively large scale.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity

Degoda

Alizadeh

Kovalenko

et al. 2018

Advances in Condensed Matter Physics

Self Cite

View full text Add to dashboard Cite

This work studies the conductivity and luminescence of ZnSe single crystals under X-ray irradiation. The experimentally derived lux-ampere characteristics of the X-ray conductivity for ZnSe crystals have a sublinear behavior within the temperature range from 8 to 420 K. The theoretical analysis of the conductivity kinetics at X-ray excitation showed that the value of maximum accumulated lightsum at deep traps does not depend on radiation intensity. However, regarding shallow and phosphorescent traps, the strength of accumulated lightsum depends on the intensity of exciting irradiation. Specifically, these shallow traps and phosphorescent traps cause the sublinear behavior of lux-ampere characteristics in the semiconductor material.

show abstract

Section: Introductionmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity

Degoda

Alizadeh

Kovalenko

et al. 2018

Advances in Condensed Matter Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…Te-doped ZnSe crystals have proven to be good scintillators [3][4][5][6], and the high-resistivity ZnSe crystal with a resistivity ρ ≥ 10 12 Ωcm can be used as the semiconducting detectors at room and high temperatures [7,8]. During the Xray and UV excitation, an intensive luminescence of two emission bands (with maxima at 630 nm and 970 nm) is observed in ZnSe crystals [9][10][11][12], while a conductivity is easily registered [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Dose Dependences of the Conductivity and Luminescence in ZnSe Single Crystals

et al. 2018

View full text Add to dashboard Cite

The studies of time-resolved dose dependences of conductivity and luminescence in ZnSe crystals at various temperatures (8, 85, 295, and 430 K) under X-ray and UV-excitation have revealed that dose dependences under X-ray excitation build up much more slowly and are more informative in comparison with UV-excitation. It is due to high penetrating depth of X-ray radiation and respective involvement of a large sample volume in the kinetic processes. Also, due to the local inhomogeneity of the excitation in the absorption of X-quantum, a significant share of the generated electron-hole pairs recombine in this local area creating a scintillation pulse, and not participating in the conductivity. The delay in the onset of the X-ray conductivity buildup at 8 K for several seconds is due to the high efficiency of the localization of free carriers in the traps, all of which become deep at this temperature. The different buildups of various bands of luminescence of irradiation time can be explained by not only different concentration of luminescence centers but also by their localization in various sections of free charge carriers. Dose dependences of the luminescence and conductivity also show that the scintillation pulse amplitudes and the current pulse amplitudes of the X-ray conductivity are not constant during irradiation of the ZnSe crystals.

show abstract

V-I characteristics of X-ray conductivity and UV photoconductivity of ZnSe crystals

Degoda

Alizadeh

Kovalenko

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

This article outlines the resulting experimental V-I curves for high resistance ZnSe single crystals at temperatures of 8, 85, 295, and 420 K under three intensities of X-ray and UV excitations (hvUV > Eg). This paper considers the major factors that affect the nonlinearity in the V-I curves of high resistance ZnSe. We observe superlinear dependences at low temperatures, shifting to sublinear at room temperature and above. However, at all temperatures, we have initial linear areas of V-I curves. Using the initial linear areas of these characteristics, we obtained the lifetime values of free electrons and their mobility. The comparison of the conductivity values of X-ray and UV excitations made it possible to reveal the fact that most of the electron-hole pairs recombine in the local generation area, creating a scintillation pulse, while not participating in the conductivity. When analyzing the nonlinearity of the V-I curve, two new processes were considered in the first approximation: an increase in the average thermal velocity of electrons under the action of the electric field and the selectivity of the velocity direction of the electron upon delocalization from the traps under the Poole-Frenkel effect. It is assumed that the observed nonlinearity is due to the photoinduced contact difference in potentials.

show abstract

X-ray conductivity of ZnSe single crystals

Cited by 3 publications

References 4 publications

The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity

The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity

Dose Dependences of the Conductivity and Luminescence in ZnSe Single Crystals

V-I characteristics of X-ray conductivity and UV photoconductivity of ZnSe crystals

Contact Info

Product

Resources

About