X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl2-based inductively coupled plasma

Chanson, Romain; Bouchoule, S.; Cardinaud, Christophe; Petit-Etienne, C.; Cambril, E.; Rhallabi, A.; Guilet, S.; Blanquet, Elisabeth

doi:10.1116/1.4862256

Cited by 9 publications

(8 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fig. 33 The binding energy of 128.5 was taken as the reference for P2p 3/2 which was in good agreement with the reported results of the literature. In Fig.…”

Section: Resultssupporting

confidence: 88%

“…After 60 s sputtering conditions the P2p spin-orbit splitting was evident from peak asymmetry and the spectrum was fitted with a P2p 3/2 : P2p 1/2 intensity ratio of 2, with a spin-orbit splitting of 1 eV. 33 The binding energy of 128.5 was taken as the reference for P2p 3/2 which was in good agreement with the reported results of the literature. 34 The oxide related peak with a binding energy separation of +6.1 eV relative to P2p 3/2 was assigned to P 2 O 5 and of +5.1 eV was assigned to In(PO 3 ) 3 .…”

Section: Resultssupporting

confidence: 84%

See 1 more Smart Citation

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

Mahata

Yoon

et al. 2015

J. Mater. Chem. C

View full text Add to dashboard Cite

Metal-oxide-semiconductor (MOS) capacitors with an amorphous Ta 1Àx Zr x O composite gate dielectric film and a SiO 2 passivation layer were fabricated on an indium phosphide (InP) substrate. To investigate the impact of the passivation layer, the interfacial chemical, physical and electrical properties of the Ta 1Àx Zr x O/InP and Ta 1Àx Zr x O/SiO 2 /InP MOS structures were studied in detail. Electrical conductivity measurements combined with chemical bonding analysis using X-ray photoelectron spectroscopy (XPS) and electron dispersive spectroscopy (EDS) were conducted in order to evaluate the suitability of a Ta 1Àx Zr x O alloy as a gate dielectric film for an InP substrate. XPS results showed that the Ta 1Àx Zr x O film retained its insulating characteristics and was thermally stable even after annealing at 500 1C. However, Fermi-level pinning and significant diffusion of indium through the Ta 1Àx Zr x O were observed. The diffusion of In was remarkably reduced after introducing the SiO 2 passivation layer, which resulted in an overall reduction in interfacial layer thickness. Parallel conductance contour measurements showed that the SiO 2 passivation layer resulted in unpinning of the Fermi-level. The introduction of a SiO 2 passivation layer with the Ta 1Àx Zr x O composite gate dielectric film was found to provide remarkably improved dielectric performance, which was mainly attributed to reduced In diffusion and the passivation of interfacial and bulk dielectric defects.

show abstract

“…Fig. 33 The binding energy of 128.5 was taken as the reference for P2p 3/2 which was in good agreement with the reported results of the literature. In Fig.…”

Section: Resultssupporting

confidence: 88%

Section: Resultssupporting

confidence: 84%

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

Mahata

Yoon

et al. 2015

J. Mater. Chem. C

View full text Add to dashboard Cite

show abstract

“…This tapered pattern profiles at a process temperature of 20 C is attributed to the formation of InCl x thin passivation layer at the pattern sidewalls because of the low volatility of indium chloride etch byproducts at this range of temperatures. 25 The presence of the InCl x byproducts on the InGaAs surface is confirmed by the XPS analysis shown in Fig. 2(a).…”

Section: Resultsmentioning

confidence: 65%

Sub-10 nm plasma nanopatterning of InGaAs with nearly vertical and smooth sidewalls for advanced n-fin field effect transistors on silicon

Chouchane

Salem

Gay

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

This work focuses on the nanopatterning of sub-10 nm InGaAs fins by inductively coupled plasma reactive ion etching for advanced IIIÀV n-fin field effect transistors (n-FinFETs) on silicon. First, different chlorine chemistries have been investigated and compared in order to select the most adequate one for the FinFETs process. Following this analysis, the BCl 3 /SiCl 4 /Ar mixture was selected for the remaining of the work. Thus, a systematic study of the etching process based on this chemistry has been carried out, and the effects of the experimental conditions on the etching kinetics and the sidewalls quality have been revealed. The optimized results depict 8 nm width fins with smooth (line edge roughness %2 nm) and almost vertical (85 6 1) sidewalls, opening the way for sub-10 nm width InGaAs FinFETs on silicon. V

show abstract

“…The two components at 444.4 and 445.3 eV are assigned as the bondings of In-P and In-O, respectively. [22][23][24][25][26][27][28] These results demonstrate that more indium atoms on the surface of #1b were oxidized than #1a. The P 2p XP spectra also deconvoluted into two components assigned as P-In and P-O bondings.…”

Section: Resultsmentioning

confidence: 77%

XPS and HAXPES analyses for pre-sputtered InP surface and InP/Pt interface

Saito¹,

Uemura²,

Kagiyama³

et al. 2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The state of the pre-sputtered indium phosphide (InP) surface was analyzed by x-ray photoelectron spectroscopy (XPS), employing synchrotron-based relatively low energy x-ray. It was found that the pre-sputtering treatment induced the phosphorus vaporization and made the surface composition In-rich, which was thought to promote oxidation of InP surface in atmosphere. The state of the interface between InP and Pt was also investigated nondestructively, by using hard x-ray photoemission spectroscopy (HAXPES). As a result, it was demonstrated that the interfacial layer was composed of the native oxide (In-O, P-O) and metallic state (In-Pt or In-In, P-P) and that the pre-sputtering treatment increased significantly the amount of the P-O, In-Pt or In-In, and P-P. From a simplified calculation, assuming a Pt/In–Pt/In–P layer stacking structure and neglecting the In-O and P-O components, the thickness of the interfacial layer was estimated to be approximately 3.0 nm.

show abstract

X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl2-based inductively coupled plasma

Cited by 9 publications

References 31 publications

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

Sub-10 nm plasma nanopatterning of InGaAs with nearly vertical and smooth sidewalls for advanced n-fin field effect transistors on silicon

XPS and HAXPES analyses for pre-sputtered InP surface and InP/Pt interface

Contact Info

Product

Resources

About

X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl2-based inductively coupled plasma

Cited by 9 publications

References 31 publications

The impact of atomic layer deposited SiO2passivation for high-k Ta1−xZrxO on the InP substrate

The impact of atomic layer deposited SiO2passivation for high-k Ta1−xZrxO on the InP substrate

Sub-10 nm plasma nanopatterning of InGaAs with nearly vertical and smooth sidewalls for advanced n-fin field effect transistors on silicon

XPS and HAXPES analyses for pre-sputtered InP surface and InP/Pt interface

Contact Info

Product

Resources

About

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate