XPS Studies of PZT Films Deposited by Metallic Lead and Ceramic PZT Dual Target Co-Sputtering

Abstract

The dependence of the chemical states of the constituent elements of a PZT thin film prepared by RF magnetron co-sputtering using ceramic PZT and metallic Pb dual target materials on the Ar + etching time was studied using XPS. The metallic Pb, lead oxide and Pb in PZT led to the different binding energies of the Pb lines. The intensity of binding energy of metallic Pb relative to that of bulk Pb increased with the depth of the film. The peak position and the line shape of the O 1s electron was associated with the different binding energies of oxygen, which interacts with Pb and Ti and Zr atoms to form the metal oxides, and the softening of the O 1s bonds by the bonding interaction in Ti O, Zr O and Pb O. The broad Ti 2 p3/2 line in the PZT film could has been associated with the various charge state of Ti and no spectral changes of Ti 2 p and Zr 3d were observed as the Ar + ion sputtering time was increased.

Annealing-induced changes in chemical bonding and surface characteristics of chemical solution deposited Pb0.95La0.05Zr0.54Ti0.46O3 thin films

“…It is also noted that the spectral peaks of the associated elements of the PLZT became more intense after sputtering the film surface with Ar + ion, as is evident in the XPS spectra. The reported BE and ΔE(Pb) values for Pb in single, highest oxidation state are in close agreement with the values reported in the literature for PZT [26,27] and PLZT [28][29][30].…”

“…The BE values obtained for the film crystallized at higher T a (750 o C) indicate a positive BE shift (0.3 eV) compared to the films crystallized at lower temperature (550 o C). The shift in BE with the change in T a is attributed to the effect of heat treatment because Zr 4+ is the thermodynamically stable state [27] Based on the BE values, it appears that the lower T a results in the mixed chemical valence state of titanium i.e., Ti 4+ and Ti 3+ , where majority may be in lower chemical valence state due to observed low BE [26,27]. On the other hand, with higher BE values and positive shift, the chemical state of Ti is single and fully oxidized i.e., Ti 4+ state.…”

Glass formation in the MoO3–CuO–PbO system

“…The O1s-spectral regions of both glass compositions ( Fig. 8 [7,[11][12][13][14][15] and for adsorbed hydroxide groups (532.2-532.6 eV) [7,8]. Note that the deconvolutions are done on the basis of the proposed glass network and the existing oxygen-containing bonds.…”

“…7(b). The higher binding-energy peak is characteristic for Pb 2+ oxidation state [14] while the lower binding-energy contribution can be attributed to metallic Pb 0 due to a reduction of some Pb 2+ ions. Such peak at 136.8 eV is not observed in the spectrum of low Pb-content (70MoO 3 Á 20CuO Á 10PbO) sample where only the presence of Pb 2+ ion is established (Fig.…”

Ultra Uniform Pb0.865La0.09(Zr0.65Ti0.35)O3 Thin Films with Tunable Optical Properties Fabricated via Pulsed Laser Deposition

“…Specifically, the binding energy value of Pb 4f was decreased at relatively low oxygen pressure, and the detailed values are summarized in Table S1 (Supplementary Materials). According to the Handbook of XPS, the binding energy of 4f 7/2 around 138.8 eV corresponds to Pb oxide (PbO) and the peak that appears near 136.7 eV corresponds to metallic Pb [47,48,49]. The shift in 4f 7/2 peak towards lower binding energy meant the valence of Pb transformed from +2 to 0 in the thin films, with the consequent creation of many oxygen vacancies [50].…”