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Abstract

We present a detailed investigation of light emission phenomena connected with the presence of hot carriers in AlGaAs/GaAs heterojunction bipolar transistors. Electrons heated by the strong electric field at the base-collector junction lead to both impact ionization and light emission. A new general-purpose weighted Monte Carlo procedure has been developed to study such effects. The measured hot electroluminescence is attributed to radiative recombinations within the valence and the conduction bands. Good agreement is found between theory and experiment.

Gunn oscillations in GaN channels

“…An analytical-band variant of EMC is preferred that enables a vast number of simulations. Very good agreement of such an approach with full band EMC results [8] gives further confidence for this choice. Moreover, we use the actual density of states, rather than the valley-based non-parabolic bands in forming the scattering tables [9].…”