Zeeman spectroscopy of the Fe3+ center in GaN

Heitz, R.; Thurian, P.; Loa, I.; Eckey, L.; Hoffmann, A.; Broser, I.; Pressel, K.; Meyer, B. K.; Мохов, Е. Н.

doi:10.1063/1.114796

Cited by 45 publications

(28 citation statements)

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“…[5]. By means of optically detected magnetic resonance [6] this PL peak could be related to an electron spin resonance signal which exhibited the symmetry properties expected for Fe 3+ on substitutional Ga sites in hexagonal GaN [6][7][8]. From PL excitation spectroscopy studies it was suggested that the deep acceptor level Fe 3+/2+ is located 2.5-2.6 eV above the valence band edge E V [6,9,10].…”

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confidence: 99%

“…To date, Fe has been found to be a frequent contaminant in GaN thin films grown by metal organic vapor phase epitaxy (MOVPE), hydride vapor phase epitaxy (HVPE) [9,12], and by the sublimation sandwich method with typical Fe concentrations around 10 17 -10 18 cm −3 [7,8]. On the other hand, attempts to intentionally produce Fe deep centers by doping during growth or by means of ion implantation have not been very successful [3,13,14].…”

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confidence: 99%

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Direct evidence for implanted Fe on substitutional Ga sites in GaN

Wahl¹,

Vantomme²,

Langouche³

et al. 2001

Applied Physics Letters

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The lattice location of iron in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation of the precursor isotope 59 Mn at a dose of 1.0×10 13 cm −2 and annealing up to 900°C, the angular distribution of β − particles emitted by the radioactive isotope 59 Fe was measured by a position-sensitive electron detector.

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confidence: 99%

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confidence: 99%

Direct evidence for implanted Fe on substitutional Ga sites in GaN

Wahl¹,

Vantomme²,

Langouche³

et al. 2001

Applied Physics Letters

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“…It was observed that all A, B, C, and D lines split into several components. The obtained spectra are much better defined than the magnetoluminescence data reported (only for A line) for GaN:Fe layers grown on sapphire [7]. For each line different splitting was found.…”

Section: Resultsmentioning

confidence: 53%

Magnetoluminescence Studies of GaN:Fe

et al. 2007

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We report on magneto-optical studies on iron doped GaN crystals grown using hydride vapor phase epitaxy method on bulk GaN substrate. The investigated samples showed an intensive 1.3 eV luminescence band, characteristic of FeA high quality of the investigated samples allowed us to observe a well-resolved fine structure of intracenter transitions between 4 T 1 (G) and 6 A 1 (S) states, consisting of four sharp no-phonon lines. All the observed no-phonon lines showed pronounced splittings in magnetic field. From the analysis of the magneto-optical data, the structure of split 4 T1(G) multiplet in the magnetic field applied along c-axis of GaN crystals was established.

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“…The full width at half maximum (FWHM) of the ZPL scales with the Fe concentration between 120 and 270 µeV, proving the samples to be of better quality than those studied previously [7]. This is mainly regarding the strain free incorporation of Fe on Ga site and was confirmed by electron paramagnetic resonance (EPR) experiments.…”

Section: Figure 1 Presents Pl Spectra Of the Internal Fementioning

confidence: 67%

“…center in GaN exhibits a structured near infra red (IR) luminescence at 1.299 eV with a 8 ms lifetime [6,7]. By means of photoluminescence excitation (PLE) Heitz et al identified higher excited states,…”

Section: Introductionmentioning

confidence: 99%