Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric

Abstract

The effects of zinc concentration on the performance of solution processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) have been investigated using high-k aluminum titanium oxide as gate dielectric. The x-ray diffraction results confirmed that all the IGZO channel layers are amorphous. The performance of a-IGZO TFTs were investigated in the linear regime operation. Highest linear field-effect mobility of 5.8 cm2/V s with an Ion/Ioff ratio of 6×107 and subthreshold swing of 0.28 V/dec were obtained for the a-IGZO (311) TFTs. The obtained performance of the a-IGZO TFTs is very promising for low-voltage display applications.

Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

“…High  amorphous-oxide TFTs have been demonstrated by using vacuum depositions. Very recently, several research groups have exhibited ZnSnO (ZTO), InGaZnO 4 (IGZO), and InZnO (IZO) TFTs through solution-based processes such as sol-gel and spin coating [6][7][8]. The non-vacuum process is a simple and powerful tool for reducing production cost and equipment investment in the flat-panel display (FPD) industry; however, most of the current research still utilises vacuum deposited films as a gate dielectric.…”

High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

“…6,7 Solution deposition techniques have also been employed for the fabrication of oxide TFTs. During the last few years, zinc oxide, 8,9 indium oxide, 10,11 zinc tin oxide, 12,13 indium zinc oxide, 14,15 and indium gallium zinc oxide [16][17][18] based thin film transistors with reasonable performance have been reported using spin coating technique. It is noted that, in most of the previously reports on solution processed TFTs, high annealing temperatures have been used to achieve better device performances and the TFTs are operated in very high operating voltage ranges.…”

N‐Type Transparent Semiconducting Oxides

“…Further experimental details can be found in [129]. The effects of composition (by changing the zinc concentration in the precursor solution, obtaining molar ratios of Ga:In:Zn of 1:3:1, 1:3:2 and 1:3:3) and T A were studied, in order to obtain TSOs that would allow for high performance TFTs.…”